Allicdata Part #: | F6284-ND |
Manufacturer Part#: |
MG06400D-BN1MM |
Price: | $ 146.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | IGBT MODULE PACKAGE D 600V 400A |
More Detail: | IGBT Module Half Bridge 600V 460A 1400W Chassis M... |
DataSheet: | MG06400D-BN1MM Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 132.72300 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 460A |
Power - Max: | 1400W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 400A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 18nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | D-3 Module |
Supplier Device Package: | D3 |
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The MG06400D-BN1MM module is categorized under Transistors - IGBTs - Modules. It is an insulated-gate bipolar transistor module that finds applications in the power industry. It is a single-phase, reverse conduction device with a rated output voltage of 650 V, a collector current of 40 A, an on-state voltage drop of 1.45 V, and a nominal gate current of 8.5 mA.
An insulated-gate bipolar transistor (IGBT) is a type of power semiconductor device that combines the properties of a bipolar transistor and a metal-oxide semiconductor field-effect transistor (MOSFET). It employs a non-linear current conduction mechanism which makes it ideal for applications which require very high switching speeds. IGBTs are commonly used in various kinds of power electronics systems such as DC-AC converters, motor drives, inverters, and as switching elements in power supplies.
The MG06400D-BN1MM module is an ideal short circuit output switch or commutating switch for fixed switching frequency AC/DC converters. Its main features include a low turn-on voltage, a low turn-off voltage (1 V or less), a low static output power loss of 1.45 V, a low turn-on gate current, and an excellent temperature characteristics of the on-state voltage drop.
The working principle of the MG06400D-BN1MM module is similar to that of a regular power semiconductor IGBT. When the gate current of the device is increased, the transistor is turned on and a low on-state voltage is observed. When the gate current is reduced, the transistor turns off and the voltage across the device increases to a high value. The device requires less energy to turn on and turn off, making it an ideal solution for various kinds of switching applications.
In addition, the MG06400D-BN1MM module is extremely efficient when operating for long periods. It also has superior switching characteristics, making it ideal for AC/DC converters and inverters. The device has a wide range of applications in the power electronics industry, such as in medical, telecommunications, and aviation equipment.
In summary, the MG06400D-BN1MM module is a highly efficient IGBT module that can be used in various power electronics systems. It is categorized under Transistors - IGBTs - Modules and finds applications in the power industry. The device has a low turn-on voltage, a low static output power loss, a low static gate current, and an excellent temperature characteristics of the on-state voltage drop. The working principle of the device is based on the non-linear current conduction of an IGBT, where the gate current is increased to turn on the transistor and reduced to turn off the transistor.
The specific data is subject to PDF, and the above content is for reference
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