MIC5013BM-TR

MIC5013BM-TR Application Field and Working Principle

The MIC5013BM-TR is a high performance single gate driver PMIC (Power Management Integrated Circuit). This PMIC offers advanced features, including electrostatic discharge protection, current limiting protection, and various design benefits. The device has been designed to provide market leading drive capability for MOSFETs.

The MIC5013BM-TR is well suited for applications such as air conditioners, copiers, laser printers, entertainment systems and other consumer electronics. The MIC5013BM-TR offers an ideal solution for battery-powered applications where users need to reduce their power consumption and still provide efficient drive to the gate of a switch.

The MIC5013BM-TR is a P- and N-channel, single-channel gate driver which consist of two independent power switches, with output current ratings up to 1.8A and peak current ratings up to 4.0A. This PMIC also features a wide common mode voltage range of -0.3V to 7V and creepage and clearance ratings of more than 500V.

The MIC5013BM-TR provides low conductivity and leakage current, as well as excellent ESD protection which ensures that the circuit is protected from transients and power surges. It also provides an internal current sense resistor, which allows for accurate current measurement and protection. The MIC5013BM-TR also includes an I2C compatible control interface, as well as multiple voltage protection features, to ensure the stability and safety of the system.

In addition, the MIC5013BM-TR offers a wide operating temperature range of -40°C to +125°C, making it suitable for a variety of applications in various climates and environments. This PMIC is designed to drive many types of IGBTs and MOSFETs, as well as power FETs, eliminating the need for external Schottky diodes or Zener diodes.

Working Principle

The MIC5013BM-TR is a monolithic high side and low side gate driver which consists of two independent power switches, an input control stage, and a current sense stage. The main idea behind the device is to enable the gate of the MOSFET or IGBT to be driven high or low with a minimum effort. This ensures that the MOSFET or IGBT can be controlled with a wide range of gate drives, such as a PWM signal, and that the gate voltage can be adjusted to ensure the device is switched rapidly into saturation.

The input stage of the device provides high input impedance, while the output stage features high slew rates which helps to reduce the turn-on and turn-off times of the transistors. The current sense stage provides current limiting and current feed back, which can be used to improve the efficiency of the switch. The device also contains an integrated temperature protection feature, which helps to protect the device from overheating.

In addition, the device also offers various protection features for the gate drive, such as overvoltage protection, overcurrent protection, and undervoltage protection, which helps to ensure that the switch is not damaged in the event of an over-current or over-voltage condition. The I2C communication interface allows for various functions, such as monitoring and control, as well as over current protection, to be implemented.

Conclusion

The MIC5013BM-TR is a high performance PMIC which provides the features and benefits necessary to drive IGBTs and MOSFETs in high power applications, while maintaining an easy-to-implement, low-cost solution. This device offers integrated ESD protection, current limiting and current feedback, overvoltage and undervoltage protection, temperature protection, and I2C control interface.

The MIC5013BM-TR provides a highly efficient gate drive solution and utilizes advanced features to ensure the protection and reliability of the system. It is ideal for a wide range of applications, including battery-powered devices, air conditioners, copiers, laser printers, entertainment systems, and other consumer electronics.