Allicdata Part #: | MIO1200-25E10-ND |
Manufacturer Part#: |
MIO1200-25E10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT SGL SWITCH 2500V E10 |
More Detail: | IGBT Module NPT Single Switch 2500V 1200A Chassis... |
DataSheet: | MIO1200-25E10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single Switch |
Voltage - Collector Emitter Breakdown (Max): | 2500V |
Current - Collector (Ic) (Max): | 1200A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 1200A |
Current - Collector Cutoff (Max): | 120mA |
Input Capacitance (Cies) @ Vce: | 186nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | E10 |
Supplier Device Package: | E10 |
Base Part Number: | MIO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are a form of semiconductor that can be used to amplify or switch electrical signals. The IGBT (insulated-gate bipolar transistor) is a type of semiconductor component that combines the benefits of both a transistor and a field-effect transistor (FET). IGBT modules are a type of power module used to package one or more insulated gate bipolar transistors (IGBTs) and a diode, typically together with various discrete devices such as resistors and capacitors, onto a printed circuit board. One type of IGBT module is the MIO1200-25E10.
Application Field and Working Principle of MIO1200-25E10
The MIO1200-25E10 is a type of IGBT module used in medium power applications such as UPS systems, motor drives and inverters. It is designed to provide a high speed switching capability with fast switching characteristics and low power losses due to its careful design. This module is capable of providing up to 1200A/1200V of current and voltage, as well as a maximum frequency of up to 10kHz. The MIO1200-25E10 is available in a variety of packages such as a 9mm, 11mm, 12mm or 13mm package, depending on the needs of the system design.
The MIO1200-25E10 module consists of several components that work together to provide the desired performance. The module consists of one or more IGBTs, an integrated RC snubber and a reverse-parallel freewheeling diode. The IGBTs each consist of two transistors, a P-type MOSFET and N-type MOSFET, which are arranged in a Darlington configuration. The IGBTs are designed to provide fast switching times, low power losses and high efficiency in order to maximize the power output of the system. The RC snubber offers protection against voltage spikes and reduces EMI (Electro-Magnetic Interference) generated by the switching of the IGBTs. The reverse-parallel free wheeling diode provides current-diverting capability to the module which helps protect against voltage transients and provides protection against short circuits.
The MIO1200-25E10 is typically used in applications such as inverters, motor drives, UPS systems or any application where fast switching times, low power losses and high efficiency are required. This module offers cost-effective and reliable operation as well as low maintenance due to its sophisticated design. It is designed to provide stable operation even in high temperature and humidity environments, making it suitable for industrial and outdoor applications.
The MIO1200-25E10 is a powerful and reliable IGBT module, designed to provide a high speed switching capability with fast switching characteristics and low power losses for medium to high power applications. Its integrated RC snubber and reverse-parallel freewheeling diode offer protection against voltage spikes, transients and short circuits, allowing for reliable and stable operation. Its sophisticated design and wide selection of package sizes offer cost-effective and low-maintenance solutions for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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