Allicdata Part #: | MIO1200-33E10-ND |
Manufacturer Part#: |
MIO1200-33E10 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT SGL SWITCH 3300V E10 |
More Detail: | IGBT Module NPT Single Switch 3300V 1200A Chassis... |
DataSheet: | MIO1200-33E10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Single Switch |
Voltage - Collector Emitter Breakdown (Max): | 3300V |
Current - Collector (Ic) (Max): | 1200A |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 1200A |
Current - Collector Cutoff (Max): | 120mA |
Input Capacitance (Cies) @ Vce: | 187nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | E10 |
Supplier Device Package: | E10 |
Base Part Number: | MIO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MIO1200-33E10 is an IGBT module that provides great performance for electrical engineers who are looking for efficient energy solutions. The module is widely used in applications that require high switching speeds, high current, and reverse voltage handling. In this article, we will discuss the applications and working principle of the MIO1200-33E10.
The MIO1200-33E10 is an excellent choice for applications that require a wide voltage range, low EMI noise and the ability to handle large current under high frequencies. It is suitable for high power applications such as UPS, frequency converters, magnetic levitation, and motor drives. The module is also used in electric rail systems and industrial and automotive applications.
The MIO1200-33E10 can also be used in solar inverters and converters, DC-DC converters and electric vehicle applications. The module also offers excellent power loss performance, enabling engineers to reduce heat dissipation and save space. The MIO1200-33E10 is also used in telecom base station power supplies, power factor correction and battery chargers.
The MIO1200-33E10 is an Insulated Gate Bipolar Transistor (IGBT) module that consists of two IGBTs connected in an anti-parallel configuration with a reverse parallel diode. The module is designed with a metal baseplate and aluminum case to ensure better thermal conductivity. The metal baseplate also adds rigidity and strength to the module.
The working principle of the MIO1200-33E10 is relatively simple. When a voltage is applied to the gate, it creates a channel between the emitter and collector. This allows electrons to flow between them, creating a current flow and thus producing electrical energy. The speed of the current flow is determined by the voltage applied on the gate. As this voltage increases, so does the speed of the current, allowing the module to be used in applications where high switching speeds are required.
The MIO1200-33E10 is highly reliable and efficient, making it an excellent choice for applications where high power and fast switching are required. The module is also designed to be efficient in terms of energy consumption, offering great performance with minimal energy wastage.
In conclusion, the MIO1200-33E10 is an excellent choice for applications that require fast switching speeds and high current handling. It is suitable for a wide range of applications such as UPS, frequency converters, magnetic levitation, and motor drives. The module is also designed to be energy efficient, providing great performance with minimal energy wastage. The working principle of the MIO1200-33E10 is relatively simple, allowing electrons to flow between the emitter and collector when a voltage is applied to the gate.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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