Allicdata Part #: | MIO1500-25E10-ND |
Manufacturer Part#: |
MIO1500-25E10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT MODULE SGL 1500A E10 |
More Detail: | IGBT Module NPT Single Switch 2500V 1500A Chassis... |
DataSheet: | MIO1500-25E10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single Switch |
Voltage - Collector Emitter Breakdown (Max): | 2500V |
Current - Collector (Ic) (Max): | 1500A |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 1500A |
Current - Collector Cutoff (Max): | 100mA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | E10 |
Supplier Device Package: | E10 |
Base Part Number: | MIO |
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The MIO1500-25E10 is a module of transistors, and specifically insulated gate bipolar transistors (IGBTs). These modules are specifically designed for power switching applications that require high voltage and high current. The 1500-25E10 offers a high-performance, robust package and reliable operation for use in the most demanding conditions. It is the go-to option for high power, high-performance applications that require reliability and performance.
The main use of the MIO1500-25E10 is in power switching applications. IGBTs are used in a variety of applications, such as motor drives, solar power systems, wind turbines, uninterruptible power supplies and aircraft power systems. The 1500-25E10 is designed specifically for such applications, and is capable of withstanding high power and high voltages, as well as providing reliable operation in all conditions.
The working principle of the MIO1500-25E10 is a hybrid between insulated gate transistors and bipolar transistors. IGBTs are an innovative generation of semiconductors that combine the best features of both these types of transistors to create an efficient and reliable power switching solution. An IGBT consists of an insulated gate and a base region, which allows for a higher current and voltage rating for the transistor compared to other transistors.
In operation, the MIO1500-25E10\'s insulated gate works like a normal transistor, allowing current to flow when it is in the “on” state. The main power is supplied by the base region, which causes a voltage to be applied to the gate of the transistor. This causes the charge carriers to accumulate in the base region and form an electric field, which results in the current flowing through the transistor. In the “off” state, the IGBT returns to its original state and becomes non-conductive.
The 1500-25E10 is a robust module designed to withstand high power applications and is reliable in all conditions. Its insulated gate bipolar transistors are designed to allow for high power and accuracy along with a high voltage rating. It is the go-to option for power switching applications that require reliability and performance. With its simple operation and robust design, the MIO1500-25E10 is an ideal choice for applications that require high power, high voltage and a reliable operation.
The specific data is subject to PDF, and the above content is for reference
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