
Allicdata Part #: | MJD50-ND |
Manufacturer Part#: |
MJD50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 1A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 400V 1A 10MHz 1.56W S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max): | 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 300mA, 10V |
Power - Max: | 1.56W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD50 |
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The MJD50 transistors, also known as bipolar junction transistors (BJT), are devices which are composed of three layers of semiconductor materials. These devices are employed in a range of applications, and have been implemented in a myriad of electronics and communications systems for use in amplifying electrical signals.
A basic explanation of the operation of the MJD50 transistors can be found in the following diagram:
The diagram depicts three terminals on the MJD50 transistors, namely the base, collector and emitter. These terminals are used to construct transistors which are used in either amplifying or switching operations. The device is composed of three layers of semiconductor material, one part consisting of N-type material, while the other two contain P-type material. The N-type material forms the emitter, while the other two materials are separated and form the collector and base of the device.
In amplifying operations, the base terminal of the device forms an electrical signal through its connection to an external voltage source. As a result, whenever an electronic signal passes through the base terminal it produces an amplified version at the collector terminal. In order to achieve this result, electrons must first be injected into the base region from the emitter via the external voltage source. This flow of electrons through the base region allows for the amplification of the original electrical signal. The electrons are collected by the collector terminal, and this completes the amplification process of the signal.
Switching operations with the MJD50 transistors receive its input voltage through the base terminal and can switch the device either "on" or "off" depending on the amplitude of the input voltage. When an electronic signal passes through the base terminal and reaches the desired amplitude, the device switches to "on" mode and a current is passed through the collector and emitter via the base region. The device turns "off" when the input voltage level drops below the threshold voltage, resulting in the current flow being cut off.
MJD50 transistors are employed in a range of applications such as radio frequency circuits, amplifiers, oscillators and other digital logic circuits. In addition, these components are used in consumer electronics, computers, and telecommunications devices. Furthermore, these transistors can be used as industrial and medical devices, making them valuable additions to many different hardware systems.
In conclusion, MJD50 transistors are versatile single component devices which are made up of three layers of semiconductor materials. They are employed in amplifying and switching operations and find utilization in a range of different applications. The diagrams and explanations provided in this document help to illustrate the ways in which MJD50 transistors work and how they are used.
The specific data is subject to PDF, and the above content is for reference
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