MJD50TF Allicdata Electronics

MJD50TF Discrete Semiconductor Products

Allicdata Part #:

MJD50TFTR-ND

Manufacturer Part#:

MJD50TF

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 1A DPAK
More Detail: Bipolar (BJT) Transistor NPN 400V 1A 10MHz 1.56W S...
DataSheet: MJD50TF datasheetMJD50TF Datasheet/PDF
Quantity: 6000
2000 +: $ 0.15778
6000 +: $ 0.14690
10000 +: $ 0.14509
Stock 6000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 1.56W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3
Base Part Number: MJD50
Description

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The MJD50TF is a significantly improved version of the standard bipolar junction transistor designed to provide excellent performance in a wide variety of applications. It has a very high current gain, low operating temperature, wide input and output ranges, and low on-state losses. These features make it ideal for use in many industrial, commercial, and consumer electronic applications.

MJD50TF transistors are constructed in a single-die, planar-type package. They are produced using a multi-layer dielectric to add additional voltage, temperature, and electrical properties. This allows the transistor to be used in a wide variety of applications, including high-power and high-frequency circuits. The transistor is designed to combine high performance with a minimum of electrical power and voltage dissipation. As such, it is highly suitable for use in high-speed digital and analog circuits.

Two complementary terminals in the MJD50TF form the base and collector, which together form a bipolar junction. These terminals allow the collector current to be regulated by an externally applied voltage. An NPN transistor has its anode, or positively charged terminal, as the base and its cathode, or negatively charged terminal, as the collector. When a current is passed between the base and collector, it will induce electron flow from the anode to the collector, creating a base current. This, in turn, will cause the collector current to increase.

In addition to providing high current gain and low dissipation, the MJD50TF is also capable of providing fast switching times and low capacitance. This makes the transistor excellent for applications in high-frequency circuits such as DC-DC converters, voltage regulators, and amplifiers. Additionally, the transistor exhibits thermal stability and a high breakdown voltage, allowing it to be used in rugged environments.

The MJD50TF also features low forward voltage drop and low voltage surge protection. This ensures that the device can handle high power levels and remain reliable even in the presence of high-voltage transient events. The device further features low DC current variations, meaning that it can be used in circuits that require highly accurate voltage regulation.

Finally, the MJD50TF has a variety of other features that make it highly suitable for a wide range of applications. It is ideal for use in low-voltage, high-current circuits such as power supplies, digital-to-analog converters, voltage regulators, and digital logic circuits. Additionally, the device is particularly well suited for battery-powered applications as it can provide superior performance even when used in low voltage and high temperature conditions.

The specific data is subject to PDF, and the above content is for reference

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