Allicdata Part #: | MJE4353OS-ND |
Manufacturer Part#: |
MJE4353 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 160V 16A TO218 |
More Detail: | Bipolar (BJT) Transistor PNP 160V 16A 1MHz 125W Th... |
DataSheet: | MJE4353 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 3.5V @ 2A, 16A |
Current - Collector Cutoff (Max): | 750µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 8A, 2V |
Power - Max: | 125W |
Frequency - Transition: | 1MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of a semiconductor material with at least three terminals for connection to an external circuit. The transistor can be classified based on its internal structure, working principle and its resulting application field. The MJE4353 is a type of single bipolar junction transistor (BJT).
Structure
MJE4353 is a medium power, NPN, general-purpose, silicon power transistor. It consists of a single-piece injection molded plastic envelope with features like low thermal resistance and high voltage capabilities. It features a high power dissipation limiting capabilities and high current gain. The MJE4353 has two leads, the emitter and the collector. The emitter is the lead that carries the electrons. The collector is a contact or junction where the electrons are re-collected by the transistor.
Working Principle
The working principle of the MJE4353 is based on the NPN bipolar junction transistor structure. This device is made up of three P-N-P junctions, one between the base and the collector and one between the base and the emitter. When the transistor is in operation, the electrons from the emitter are attracted towards the collector, owing to the potential difference created between the base and the collector. This switch-like action allows for circuit control and amplification. As electrons move from the collector to the emitter, a current is created in the circuit. This current can then be regulated or amplified in order to provide a desired output.
Application Field
The MJE4353 transistor has various application areas due to its high power dissipation and voltage capabilities. It is usually used in switching circuits, as it provides fast switching action while limiting power losses. It is also sometimes used in amplifying signals, such as audio signals or radio signals. Due to its versatile applications, this transistor is used in various commercial and industrial applications such as automotive, audio systems, speed controls, oscillators, amplifiers, etc.
Conclusion
The MJE4353 is a single bipolar junction transistor which is widely used for switching and amplifying electronic signals and power. It consists of three P-N-P junctions in its internal structure, and it is capable of controlling and limiting power dissipation. Its working principle is based on the NPN BJT structure and it is used in many applications like in automotive and audio systems, oscillators, amplifiers, etc.
The specific data is subject to PDF, and the above content is for reference
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