MJL0281AG Allicdata Electronics
Allicdata Part #:

MJL0281AG-ND

Manufacturer Part#:

MJL0281AG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 260V 15A TO-264
More Detail: Bipolar (BJT) Transistor NPN 260V 15A 30MHz 180W T...
DataSheet: MJL0281AG datasheetMJL0281AG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 260V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Power - Max: 180W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Description

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This article focuses on the MJL0281AG from Fairchild Semiconductor, a transistor specifically designed for high power audio applications. The transistor belongs to the category of single bipolar junction transistors (BJTs) and is suitable for audio and switching applications in harsh environments. This article will discuss the application field and the working principle of the MJL0281AG.

The MJL0281AG is a planar NPN transistor specially designed for high voltage and high power switches. The device uses a die design that allows it to operate under high temperature and high voltage conditions, making it suitable for use in audio applications where distortion of the signal may occur due to temperature and voltage fluctuations. The device is suitable for use in the audio amplifier industry, audio switching applications, general switching operations and power diodes and motor control circuits, among others.

The MJL0281AG can be used in a wide range of audio applications. It has strong performance characteristics, which makes it suitable for audio output stages, musical synthesizers, and sound functions where high power and speed are required. The device also has very low distortion properties, which makes it suitable for use in both symmetrical and asymmetrical applications.

The device also has low saturation voltages and levels of distortion, which makes it suitable for use in battery-powered circuits. Additionally, the device is able to operate for extended periods, making it suitable for use in applications that require sustained, reliable performance. The MJL0281AG also has a high current rating, which makes it suitable for use in high power loading applications.

The MJL0281AG operates according to the principles of a bipolar junction transistor. This means that it requires two different input signals, namely a base current and a collector current. The base current may be either in the form of a current source or a voltage source. When the collector current passes through the device, it creates a voltage drop across the base-collector junction, creating a current in the emitter. This current, known as the emitter current, is then amplified by the transistor and is in turn used to produce the desired output.

The output signal is determined by the magnitude of the input current and the EMF created across the collector-base junction. The voltage gain of the device is determined by the ratio of the collector current to the base current. The current gain of the device is determined by the ratio of the collector current to the emitter current. The maximum collector-emitter voltage of the device is determined by the voltage drop across the base-collector junction.

In summary, the MJL0281AG is a planar NPN transistor designed for audio applications and harsh environments. The device belongs to the category of single bipolar junction transistors (BJTs) and is suitable for audio output stages, musical synthesizers, and sound functions where high power and speed are required. The device operates according to the principles of bipolar junction transistors and requires two different input signals, namely a base current and a collector current. The output signal is determined by the magnitude of the input current and the EMF created across the collector-base junction.

The specific data is subject to PDF, and the above content is for reference

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