MJL21193

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	16A
Voltage - Collector Emitter Breakdown (Max):	250V
Vce Saturation (Max) @ Ib, Ic:	4V @ 3.2A, 16A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 8A, 5V
Power - Max:	200W
Frequency - Transition:	4MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264

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• Introduction

MJL21193 is a power transistor of the BJT class for single-collector, also known as bipolar junction transistor. As most BJTs, the MJL21193 is used for general-purpose amplification and switching applications. The MJL21193 is designed to work in a wide range of operating conditions, from low-current amplification up to high power switching, in both moderate and high-power applications.

• Design and Construction

The MJL21193 has a bipolar NPN (Negative-Positive-Negative) structure, which means that it consists of two p-type semiconductor layers as its base and an n-type semiconductor layer as its emitter. It is also known as an "NPN-type BJT". The NPN structure gives it a large range of operational conditions and its low noise performance. The MJL21193 is built with a planar epitaxy structure, which results in better heat-dissipating performance and ensures a symmetric layout of the components. The MJL21193 is also built with a lateral affixing construction, meaning that the entire transistor is affixed onto an external base, or "header" to ensure good electrical and thermal contact. This increases the power handling capability of the transistor, allowing it to take higher than normal currents before being damaged.

• Application Field

The MJL21193\'s NPN structure and robust construction makes it ideal for power amplifiers, switching applications and general-purpose amplification. In these applications, the MJL21193\'s low noise performance and its large range of operating conditions makes it a great option.The MJL21193 is also suitable for use in high-side and low-side power switching, where it can take higher than normal current levels before being damaged. In addition, the MJL21193 is capable of handling wideband signals due to its planar epitaxy construction and its large voltage range.The MJL21193 is also used in many Industrial and Automotive applications, such as automotive power switches, solid-state relay switching, DC-DC converters, Automotive Generator controllers and many more.

• Working Principle

The MJL21193 works by amplifying the voltage or current level of a signal applied to its base. The voltage or current on the BJT\'s base determines the level of current flow between its collector and emitter terminals. For example, when a positive voltage is applied to the base, electrons flow from the emitter to the collector and the BJT is said to be in the On-State. This causes current to flow between its Collector and Emitter terminals, amplifying the applied voltage or current.When a negative voltage is applied to the base of the transistor, electrons flow from the collector to the emitter and the TJT is said to be in the Off-State. This stops current flow between its Collector and Emitter terminals, thus reducing the amplified voltage or current.

• Conclusion

The MJL21193 is a great power transistor for a wide range of applications, due to its robust design, its low noise performance, and its large range of operating conditions. It is particularly great for amplifier, switching and automotive applications, due to its above-normal power handling capabilities and its wideband signal handling ability. Finally, it is operated by the same principle as any other BJT, making it a great choice for any application that requires a reliable and powerful transistor.

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