MJL21196 Allicdata Electronics
Allicdata Part #:

MJL21196OS-ND

Manufacturer Part#:

MJL21196

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 250V 16A TO264
More Detail: Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Th...
DataSheet: MJL21196 datasheetMJL21196 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Power - Max: 200W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Description

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The MJL21196 is a 75V, NPN bipolar transistor designed for use in high power, high reliability linear and switching applications. The device features an increased voltage capability of 100V with very low leakage current and high reliability performance.

The MJL21196 is packaged in a TO-247 package, a widely used three-lead plastic-encapsulated device, which offers better thermal performance and high reliability compared to the traditional TO-220 package. This device is suitable for a variety of applications, including power amplifier and switching circuits, automotive electronics, DSP systems, and load switches.

The MJL21196 consists of a NPN transistor, a resistor, and a Schottky diode. The NPN transistor is responsible for power transfer from the collector to the emitter. The resistor acts as a base-emitter voltage divider, limiting the base-emitter voltage to approximately 5V. The Schottky diode helps in protecting the transistor from reverse breakdown in the event of a transient reverse-voltage spike.

The working principle of the MJL21196 is fairly straightforward. When a positive voltage is applied to the base terminal, current flows through the resistor and creates a voltage drop across it. This creates a base-to-emitter voltage that is below the transistor’s breakover voltage, allowing the NPN transistor to turn on and allow current to flow from collector to emitter. When the voltage is increased to the transistor’s breakdown voltage, current can flow freely from collector to emitter, resulting in a “holding” or static current. When the voltage is reduced, the transistor switches off, preventing current from flowing.

The MJL21196 is a low-cost, high-reliability solution for high power applications that require power transfer and voltage protection. Its NPN transistor provides excellent current and voltage capabilities, while its resistor and Schottky diode protect the transistor from any transient reverse-voltage spikes. This makes the MJL21196 an ideal choice for a variety of applications, including automotive electronics, power amplifier and switching circuits, DSP systems, and load switches.

The specific data is subject to PDF, and the above content is for reference

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