MMBD353LT1 Allicdata Electronics

MMBD353LT1 Discrete Semiconductor Products

Allicdata Part #:

MMBD353LT1OSTR-ND

Manufacturer Part#:

MMBD353LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE SWITCH DUAL 7V SOT23
More Detail: RF Diode Schottky - 1 Pair Series Connection 7V 2...
DataSheet: MMBD353LT1 datasheetMMBD353LT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 7V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: --
Power Dissipation (Max): 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBD353
Description

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The MMBD353LT1 is a small signal diode well-suited to the applications of a wide variety of RF signals, including those high-frequency ranges needed for digital communication systems. As a standard two-pin device, it is simple to install and convenient in connecting with other components in a circuit. This very small signal diode is capable of handling large current peaks, giving it the ability to meet the demands of high-speed applications.

The MMBD353LT1 is suitable for a variety of applications, including RFic oscillators, mixers, and switches. In terms of performance, it is designed with a wide frequency range, superior linearity, and low noise. This allows the device to be used in a broad range of demanding applications, such as spread spectrum radios, DSL, satellite receivers, Blu-ray players, digital sets, and a multitude of other digital signal processing systems.

The MMBD353LT1\'s working principle is based upon a double diffusion barrier of electrons that is produced by the voltage applied across the diode\'s input and output terminals. When the diode is forward-biased, electrons are accelerated through the two barriers, while holes are collected in the reverse-biased part of the device, thus creating a current flow. This occurs due to the differences in voltage potential across the two regions. The magnitude of the current flow is dependent upon the magnitude of the applied voltage and is limited by the maximum voltage that the diode can endure.

The MMBD353LT1 is designed to have an excellent transduction frequency range and allows for low bias current. Additionally, the rise and fall times of the device are optimized as well as its capability of withstanding high peak currents. This permits the device to be useful in applications involved in high speed data transmission and audio modulation.

The MMBD353LT1 is a high performance device and is capable of achieving very low noise performance. In terms of bandwidth, the device is suitable for high frequency and amplitude modulation applications. Furthermore, its low capacitance enables it to be employed in oscillators and mixers. For RF signal applications, the MMBD353LT1 is very suitable and offers superior performance.

In summary, the MMBD353LT1 is an excellent choice for a wide variety of RF signal applications. Its superior linearity, low noise, low leakage current, and wide frequency range make it a reliable and powerful choice for applications requiring a high degree of signal integrity and speed. Its two-pin design makes it simple to install and easy to connect to other components. Furthermore, its low capacitance and high peak current capabilities make it suitable for oscillators, mixers, and other RF signal cases.

The specific data is subject to PDF, and the above content is for reference

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