MMBZ4623-G3-18 Allicdata Electronics
Allicdata Part #:

MMBZ4623-G3-18-ND

Manufacturer Part#:

MMBZ4623-G3-18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 4.3V 350MW SOT23-3
More Detail: Zener Diode 4.3V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ4623-G3-18 datasheetMMBZ4623-G3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02204
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 1600 Ohms
Current - Reverse Leakage @ Vr: 4µA @ 2V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The MMBZ4623-G3-18 is a small signal switching diode that is typically classified as part of the Zener diode single family. This diode has a number of advantageous features that make it ideal for a wide variety of applications. It can be used in a wide range of switching, detecting, and signal conditioning activities.

The diode is capable of high speed operation, making it an attractive choice for applications where speed is critical. It has high current capability and low leakage current, making it an ideal choice for use in circuits with high power requirements. Additionally, the MMBZ4623-G3-18 is RoHS compliant and meets the requirements of the European Union’s Restriction of Hazardous Substances directive.

The diode features a full hermetic seal for total environmental protection. The hermetic seal ensures that no contaminants can enter the device, resulting in a long service life and reliable performance. The MMBZ4623-G3-18 is available in an industry-standard SMA package, making it easy to integrate into existing designs.

To understand the operational principles of the MMBZ4623-G3-18, it is important to first understand the underlying physics of diode operation. The diode is made up of two p-type and n-type materials, which are known as the PN junction. When electrical current is applied to the junction, the electrons on the n-type material move toward the P-type material and holes on the P-type material move toward the n-type material. When the voltage applied to the junction is above a certain level, known as the Zener breakdown voltage, there is a “reverse breakdown” of the diode. This allows current to flow in the reverse direction, resulting in a regulated voltage.

The MMBZ4623-G3-18 is a zener diode, which means that under normal operating conditions, it allows the current to flow in one direction. However, when the voltage reaches the Zener breakdown voltage, it “breaks down”, allowing current to flow in the reverse direction and creating a regulated voltage. This makes the diode useful for regulating and controlling voltages.

The MMBZ4623-G3-18 diode is well suited for use in a wide range of applications. It is ideal for use as a voltage regulator in circuits that require a precise voltage level. It can also be used as a switching device, where it can be used to rapidly switch between two voltage levels. It is also an ideal choice for signal conditioning applications, thanks to its ability to provide rapid switching speeds and controlled current transfer. Additionally, the diode can be used in a variety of noise suppression applications.

In summary, the MMBZ4623-G3-18 is a small signal switching diode that is typically classified as part of the Zener diode family. It is capable of high speed operation, has high current capability and low leakage current, and is available in a standard SMA package. It is ideal for use as a voltage regulator, as a switching device, and in a variety of signal conditioning and noise suppression applications.

The specific data is subject to PDF, and the above content is for reference

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