MMBZ4714-HE3-18

Introduction

The MMBZ4714-HE3-18 is a silicon planar power Zener diode with a reverse breakdown voltage of 18 volts. It features selectable grades of noise, capacitance and reverse current. The MMBZ4714-HE3-18 diode is designed to provide excellent stability, good regulation performance at wide temperature and current ranges, and low level of reverse leakage current. It is suitable for applications in switch mode power supplies, voltage regulators, automotive, telecom and industrial circuits.

Application Field

MMBZ4714-HE3-18 series application fields are mainly divided into two parts: the first is common electronic products, the second is power electronic products. For example, mobile phones, cameras, portable media players, televisions, game consoles and other small electronic products are common electronic products. As for power electronic products, some of them are switch mode power supplies, voltage regulators, automotive, telecom, industrial circuits and etc.

Working Principle

The working principle of the MMBZ4714-HE3-18 series is based on two back-to-back PN junctions connected in series. When a reverse bias voltage is applied to the diode, the electrons in the N-type layer is attracted away from the N-layer, toward the P-type layer, creating an electrical field. This field strengthens until the junctions reach the breakdown voltage of the device, at which point it is able to carry a substantial current.

Summary

The MMBZ4714-HE3-18 series diode is designed as a general-purpose power Zener diode. It is useful in applications such as switch mode power supplies, voltage regulators, automotive, telecom, and industrial circuits. The diode consists of two back-to-back PN junctions that are connected in series. When a reverse bias voltage is applied to the diode, the junctions reach the breakdown voltage of the device and it is able to conduct a substantial current.