MMBZ5226B-7-F Allicdata Electronics
Allicdata Part #:

MMBZ5226B-FDITR-ND

Manufacturer Part#:

MMBZ5226B-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 3.3V 350MW SOT23-3
More Detail: Zener Diode 3.3V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5226B-7-F datasheetMMBZ5226B-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 28 Ohms
Current - Reverse Leakage @ Vr: 25µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5226B
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are a semiconductor-based device with a variety of uses in electronics. The MMBZ5226B-7-F, specially designed for Zener Diode applications, is part of the family of single Zener diodes. It can be used in a variety of electrical circuits, from stand-alone devices to complex multi-conductor systems.

The MMBZ5226B-7-F is a two-terminal semiconductor device that offers excellent Zener breakdown characteristics. It has a maximum Zener voltage range of 6.2V to 200V. It is capable of handling a maximum current of 1.0A and can sustain a power of 2.0W. The device exhibits good electrostatic discharge (ESD) protection, with a maximum ESD voltage of 4kV.

The MMBZ5226B-7-F\'s construction consists of an n-type semiconductor layer attached to a p-type semiconductor layer. This sandwich construction forms a Zener junction, which is responsible for its breakdown characteristics. The junction is then encapsulated in a black-colored plastic encasement. The device operates at a nominal temperature of -40 degrees Celsius to +85 degrees Celsius.

The MMBZ5226B-7-F\'s primary application is low noise voltage regulator circuits. It can be connected inversely to form a diode bridge. This bridge can be used to limit voltage peaks, to stabilize voltage for sensitive electronic components, or to provide general protection for circuits. It can also be used in power supply circuits to protect against overvoltage, as well as in switching regulator designs. Furthermore, it can also be used in logic control circuits, level shifters, and other circuitry.

The working principle of the MMBZ5226B-7-F is based on its Zener diode characteristics. In this type of diode, the reverse breakdown voltage is variable depending on the applied forward bias current. Once the breakdown voltage has been reached, the diode will begin conducting. Once the diode conducts, a well-defined linear region is present in the device\'s electrical characteristic. This characteristic can be used to derive the required zener voltage, which can then be used in a variety of applications.

The MMBZ5226B-7-F is an ideal device for a wide range of Zener diode applications, due to its excellent Zener characteristics, low noise performance and temperature capabilities. It is also robust, durable, and cost-effective. As a result, it is well-suited for a variety of applications such as low noise voltage regulator circuits, diode bridges, voltage stabilizers, level shifters, logic control circuits, and power supply protection.

The specific data is subject to PDF, and the above content is for reference

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