MMBZ5226BW-7 Allicdata Electronics

MMBZ5226BW-7 Discrete Semiconductor Products

Allicdata Part #:

MMBZ5226BWDITR-ND

Manufacturer Part#:

MMBZ5226BW-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 3.3V 200MW SOT323
More Detail: Zener Diode 3.3V 200mW ±5% Surface Mount SOT-323
DataSheet: MMBZ5226BW-7 datasheetMMBZ5226BW-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 28 Ohms
Current - Reverse Leakage @ Vr: 25µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMBZ5226B
Description

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Diodes are electronic components ubiquitous in modern electronic devices. Among the many types of diodes available in the market, a Zener diode is notable for its reverse breakdown behavior.
MMBZ5226BW-7 is a Zener diode manufactured by Diodes Incorporated. In terms of application field, this diode is suitable for a vast array of applications involving low power, such as personal computer and laptop power supplies, personal digital assistants, digital cameras, and cell phones. On top of that, this diode is popular for its low reverse leakage and cost-effectiveness.
In terms of working principle and structure, this diode consists of alternating layers of P-type and N-type semiconductor materials. As it is connected in reverse bias, the N-type material acts as the anode and P-type material acts as the cathode. As an electrical current is applied in the reverse direction, the voltage at the cathode begins to increase. When the voltage reaches a certain level, called the breakdown voltage, the depletion region of the diode shrinks, allowing more current to flow through the diode and thus stabilizing the diode voltage. The Zener-based diode is built with a wider depletion region than the conventional diode, so that the breakdown voltage is achieved at a lower value, typically about 0.2 volts for MMBZ5226BW-7.
The Zener-based diode is identified by its cathode voltage to the anode direction, where the highly doped layers typically act in a reverse-biased form. This means that the diode can use a much lower current to sustain its voltage than it would with a normal diode. The anode of the MMBZ5226BW-7 also has a special layer for thermal management to ensure that the diode does not overheat during normal operation.
MMBZ5226BW-7 diode also utilizes a reverse gate-drain junction that helps to reduce the forward voltage drop in the diode and the power loss due to the gate-drain junction resistance. The gate-drain junction also acts as a tunnel barrier when current is applied in the reverse direction. This prevents current from flowing through the junction causing less junctions to be exposed and so a greater resistance. This prevents the reverse current from reaching too high a level as the amount of current that flows in the reverse direction is proportional to the voltage applied to the diode, ensuring that the diode stay within its operation limit and not overheating.

The specific data is subject to PDF, and the above content is for reference

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