MMBZ5231BW-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	5.1V
Tolerance:	±5%
Power - Max:	200mW
Impedance (Max) (Zzt):	17 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 2V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	MMBZ5231B

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Introduction

MMBZ5231BW-7-F is a single Zener diode designed to provide a constant reversed breakdown voltage under specific current biases. It is a semiconductor diode that is usually connected in reverse bias to effectively act as a voltage regulator. This type of diode contains a heavily doped p-n junction that is designed to breakdown at a specific reverse voltage, where current will flow through it, even in forward bias. This type of diode is used in a variety of applications related to safety and reliability.

Applications

MMBZ5231BW-7-F is commonly used for protecting electrical devices from overvoltage in the form of surge protection and diode clamping. Diodes of this type are also suitable for voltage regulator circuits and voltage limiter circuits. Typical applications of this diode include protection against electrostatic discharges, protection of logic circuits, monitoring and protection of automotive circuits, as well as protection of power supply circuits. Some other applications include power conversion and current limiting in high-frequency circuits, voltage stabilization for buffering and switch-mode regulators, and as a part of voltage tapering circuits that can control the gain or attenuation of a radio frequency (RF) signal.

Working Principle

The MMBZ5231BW-7-F contains a p-n junction that is usually connected in a reversed bias, which causes a strained layer to form in the depletion region. As a result, the electric field in this region is increased, causing the diode to breakdown at a particular voltage level, which is the Zener voltage. As the current through the diode increases, it is kept constant by counteracting the increase in current with an increase in resistance. Therefore, the reversed breakdown voltage remains constant as the current increases, making this diode ideal for voltage regulation.When the MMBZ5231BW-7-F is connected in a forward bias, it acts as a normal silicon diode. When the voltage applied to the diode is increased to a certain level, it reaches its Zener voltage point and begins to become a low resistance path for current. This will cause the forward voltage of the diode to remain constant as the current increases. Thus, the forward voltage drop of the diode will remain constant and not be affected by the change in current.

Conclusion

MMBZ5231BW-7-F is a Zener diode that is designed to provide a constant reversed breakdown voltage under certain conditions. It is typically used in applications such as surge protection, voltage regulation, current limiting in high-frequency circuits, and voltage tapering circuits. The working principle of this diode is based on a p-n junction that is usually connected in reverse bias. This causes the electric field in the depletion region to be increased, thereby causing the diode to breakdown at a particular voltage, known as the Zener voltage. When the diode is connected in a forward bias, it behaves as a normal silicon diode.

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