MMBZ5232B-G3-18

The MMBZ5232B-G3-18 is an NPN silicon epitaxial planar transistor, also known as a Zener diode, designed for use in voltage regulating, clipping, and blocking applications. The device is housed in a hermetically sealed package and is available in a variety of package sizes. It has a breakdown voltage (Vz) of 18V and a maximum dynamic resistance (Rz) of 5 Ohms.

The MMBZ5232B-G3-18 is a silicon-based diode with a PN junction that works according to the Zener effect. The Zener effect occurs when a voltage is applied across the PN junction in a reverse bias configuration with a sufficiently high voltage. The electric field in the depletion region of the junction continues to increase until it reaches a critical value at which energy is injected into the junction by thermionic emission.

The MMBZ5232B-G3-18 has several applications. It can be used in voltage regulating circuits to maintain a specific voltage level across a load, or as a voltage-clamping device to protect sensitive electronic components from overvoltage. It can also be used as a low-cost precision rectifier for ripple suppression on DC power supplies, or as a noise filter for clipping voltage spikes on a signal line. Additionally, the Zener diode can be used as a temperature-compensated voltage reference.

The working principle of the MMBZ5232B-G3-18 is based on the Zener effect. When a forward bias voltage is applied, the diode behaves like a normal diode, allowing current to flow from anode to cathode. When a reverse bias voltage is applied, the electric field in the depletion region of the PN junction reaches a critical value and electrons are injected by thermionic emission, resulting in a sharp increase in current. This increase in current creates a stabilized voltage across the diode, which is referred to as the Zener voltage (Vz). This is the voltage at which Zener breakdown occurs.

As the power supply voltage increases beyond the Zener voltage, the current through the diode increases exponentially. This increased current creates a voltage drop across the diode, known as the dynamic resistance (Rz) which limits the amount of current that can flow through the diode. The maximum dynamic resistance of the MMBZ5232B-G3-18 is 5 Ohms.

In summary, the MMBZ5232B-G3-18 is a Zener diode designed for voltage regulating and blocking applications. It utilizes the Zener effect to maintain a specific voltage level across a load and has a breakdown voltage of 18V and a maximum dynamic resistance of 5 Ohms. Additionally, it can be used as a voltage reference and in power supply circuits for ripple suppression and noise filtering.