
Allicdata Part #: | MMBZ5235B-HE3-18-ND |
Manufacturer Part#: |
MMBZ5235B-HE3-18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 6.8V 225MW SOT23-3 |
More Detail: | Zener Diode 6.8V 225mW ±5% Surface Mount SOT-23-3 |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.01889 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±5% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 5 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 5V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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Diodes are a type of two-terminal electronic component that allows electricity to flow in only one direction. Zener diodes are a type of diode that are designed to allow current to flow in either direction and are used when the voltage of a circuit needs to be regulated and stabilized. A MMBZ5235B-HE3-18 is a type of Zener diode. It is a single diode which is ideal for very low-noise applications needed in high frequency.
The MMBZ5235B-HE3-18 is a 3.0 V, 5.0 W surface mount Zener diode, encased in a DO-214AB package. The maximum forward current continuous operation is 150 mA, while the maximum reverse current is 800uA. The forward voltage drop is 1.2V while the thermal resistance is 1.25° C/W. The MMBZ5235B-HE3-18 has a long shelf life, and is designed to operate up to a temperature range of -65° C to +150° C.
A MMBZ5235B-HE3-18 is used for a wide range of application fields, including but not limited to: voltage clamping, voltage protection, polarity protection, load protection, power regulatorement and power management. The MMBZ5235B-HE3-18 has a low noise figure and wide frequency range, making them ideal for use in high frequency and low noise applications, such as in video circuits, computers, LCD televisions and more. Furthermore, the MMBZ5235B-HE3-18 is also well suited for use in broadband power amplifiers, due to its low noise figure, low output impedance and low package profile.
The working principle of the MMBZ5235B-HE3-18 is based on the principle of electron tunneling. In this method, an electron travels through a barrier of energy with a very low probability. The barrier must be thin enough to allow the electrons to pass through. When a MMBZ5235B-HE3-18 is operating, it is able to control the reverse current flowing through it by using a thin barrier of energy. As the flow of current changes, the barrier increases or decreases which in turn controls the flow of electrons.
The MMBZ5235B-HE3-18 is a low noise, low current, high frequency Zener diode that is used in a variety of applications. It has a low thermal resistance and wide temperature range, making it ideal for high temperature applications. Furthermore, its working principle the electron tunneling method, allows it to operate at low voltage levels and maintain a regulated output voltage.
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