Allicdata Part #: | MMBZ5237ELT3G-ND |
Manufacturer Part#: |
MMBZ5237ELT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 8.2V 225MW SOT23-3 |
More Detail: | Zener Diode 8.2V 225mW ±5% Surface Mount SOT-23-3 ... |
DataSheet: | MMBZ5237ELT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 8.2V |
Tolerance: | ±5% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 6.5V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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Diodes have a unique electrical behaviour. The most basic type is the p-n junction diode, which allows current to pass in one direction and block it in the other. Zener diodes are a type of p-n junction diode that feature a special property: they can allow current to pass through them in both directions.A Zener diode, like the MMBZ5237ELT3G, can be used to provide a regulated, stable power output. The diode limits the maximum voltage that can be applied to it, preventing any further increase in voltage. This makes it an effective voltage regulation tool in applications such as power supply regulation, voltage protection, and voltage reference.The MMBZ5237ELT3G, which is a single Zener Diode, is designed and tested to provide a maximum voltage of 3.3V. It has a power dissipation of 250mW and features bi-directional current limiting.The working principle of the MMBZ5237ELT3G can be explained through the construction and operation of a basic p-n junction diode. A p-n junction diode is a semiconductor chip containing a single p-n junction. It has two layers, the p-type layer and the n-type layer.When the p-type layer is connected to a negative terminal and the n-type layer is connected to a positive terminal, the p-type and n-type layers form a p-n junction. This junction stands in between the two layers and creates a barrier, allowing electrons to cross from the n-type layer to the p-type layer.The electrons flow from the p-type layer to the n-type layer when the voltage across the diode is high enough for it to conduct. This is known as forward biasing. When the voltage across the p-n junction is below a certain point, the flow of electrons from the n-type layer to the p-type layer stops and the diode is said to be reverse biased.In the case of the MMBZ5237ELT3G, the Zener voltage of 3.3V sets the level at which the diode begins to conduct current in the opposite direction. This means that any voltage increase beyond 3.3V will be limited and any voltage decrease below 3.3V will cause the diode to become reverse biased.In summary, the MMBZ5237ELT3G is a single Zener diode designed and tested to provide a regulated 3.3V voltage output. It is used in applications such as power supply regulation, voltage protection, and voltage reference. By allowing current to flow in one direction only, the diode prevents any further increase in voltage.
The specific data is subject to PDF, and the above content is for reference
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