MMBZ5238B Allicdata Electronics

MMBZ5238B Discrete Semiconductor Products

Allicdata Part #:

MMBZ5238BTR-ND

Manufacturer Part#:

MMBZ5238B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 8.7V 350MW SOT23-3
More Detail: Zener Diode 8.7V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5238B datasheetMMBZ5238B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 8.7V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5238B
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMBZ5238B is a single, low power zener diode, which offers many capabilities and advantages for users in a variety of different application fields. By understanding the device’s structure, function and design, users can optimize the performance and usage of the MMBZ5238B for the various applications required.

The MMBZ5238B has a wide range of application fields due to its low power consumption and broad peak inverse voltage capabilities. Some popular applications include circuits requiring power regulation, surge suppression, ESD protection, and noise reduction. Its small package and low power consumption make it an ideal choice for applications where physical and power space is at a premium. Additionally, the MMBZ5238B is an excellent choice for use in general purpose circuits requiring transistors, operational amplifiers, and N-channel MOSFETs. In particular, the device can be used as a voltage regulator with current limit at high temperatures.

The working principle of the MMBZ5238B is quite simple. With forward bias applied to the anode, electrons start flowing from the cathode to the anode and as the voltage increase, the current will reach a certain limit and the zener breakdown occurs through the depletion region of the diode, creating a regulated reverse bias current known as the threshold voltage. This voltage, which will remain stable even if the external voltage is fluctuating, can be used to control the operation of other components in the system.

In order to ensure that operation of its products is optimised, the MMBZ5238B measures its forward current I F , diode for the blocked voltage V BR , reverse current I R , and power dissipation P D . Some important characteristics to consider when choosing this device include the static region temperature coefficient, reverse stand-off current, and warm-up time. It is important to take all of these into account when evaluating which device is ideal for the applications in question.

The MMBZ5238B is a reliable and popular choice among users due to its impressive performance and effective working principle. Its low power consumption and broad peak inverse voltage capabilities make the device the preferred option for a variety of different applications fields, ranging from power regulation to surge suppression. Users should consider all necessary characteristics and evaluate the different options to ensure that the MMBZ5238B is used for its highest purpose in the application of choice.

The specific data is subject to PDF, and the above content is for reference

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