MMBZ5239B-7-F Allicdata Electronics
Allicdata Part #:

MMBZ5239B-FDITR-ND

Manufacturer Part#:

MMBZ5239B-7-F

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 9.1V 350MW SOT23-3
More Detail: Zener Diode 9.1V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5239B-7-F datasheetMMBZ5239B-7-F Datasheet/PDF
Quantity: 1000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 7V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5239B
Description

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A MMBZ5239B-7-F is a single Zener diode that is commonly used in various applications. It is manufactured by ON Semiconductor as part of their MMBZ family. This diode has a maximum power rating of 500mW and a maximum breakdown voltage of 7.0V. The diode also features a very low dynamic impedance and fast switching time.

MMBZ5239B-7-F is widely used in different applications. It is commonly used in industrial and telecommunications equipments, such as in cellular and cordless phones, power distribution circuits, computers and optical analysis systems.

The diode also finds good application in voltage regulation applications. The diode can be used to regulate the current in a circuit. This helps in avoiding any damage to the equipment due to voltage fluctuation. The diode is also used in temperature sensing applications wherein it can be used to detect any temperature change that occurs around the device.

The working principle of the MMBZ5239B-7-F is based on the Zener breakdown effect. A Zener diode, when connected in reverse bias, appears to be an insulator. However, when the reverse bias voltage is increased beyond a certain threshold potential, it causes the depletion layer of the diode to breakdown. This results in a large current to flow through the diode. This current flow is known as the Zener current and the voltage at which it occurs is known as the Zener voltage.

The MMBZ5239B-7-F has a Zener voltage of 7.0V which means that it can be used as an efficient regulator against over voltages. The diode has a wide reverse breakdown region, low dynamic impedance and fast switching time. It is also very reliable and has a long service life, making it a preferred choice for many applications.

MMBZ5239B-7-F is a single Zener diode with a maximum power rating of 500mW and a breakdown voltage of 7.0V. This diode has a wide range of applications, from industrial and telecommunications equipment to voltage regulation and temperature sensing. It has a Zener breakdown effect with a low dynamic impedance and fast switching time. This makes it suitable for many different applications.

In conclusion, the MMBZ5239B-7-F is an efficient single Zener diode used in various applications. It has a maximum power rating of 500mW, a breakdown voltage of 7.0V and features a Zener breakdown effect with low dynamic impedance and fast switching time. This makes it a reliable choice for many applications, from industrial and telecommunications equipment to voltage regulation and temperature sensing.

The specific data is subject to PDF, and the above content is for reference

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