MMBZ5240B-7-F Allicdata Electronics
Allicdata Part #:

MMBZ5240B-FDITR-ND

Manufacturer Part#:

MMBZ5240B-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 10V 350MW SOT23-3
More Detail: Zener Diode 10V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5240B-7-F datasheetMMBZ5240B-7-F Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5240B
Description

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Diodes - Zener - Single

The MMBZ5240B-7-F is a single-zone zenner diode designed to provide a compact solution that provides protection in a variety of applications. This device is suitable for applications requiring voltage regulation, overvoltage protection, and ESD protection. The MMBZ5240B-7-F is designed with a low forward voltage drop, high-efficiency performance, and a wide operating temperature range.

Application field

The MMBZ5240B-7-F zener diode is most commonly used in consumer electronic applications such as computers, televisions, digital signs, and other consumer electronic equipment. It can also be used in industrial and automotive applications for voltage-regulating and overvoltage protection diversity.

Working principle

The MMBZ5240B-7-F diode works on the principle of the avalanche breakdown effect, wherein a current is passed through a diode in the reverse bias direction resulting in an increase in the electric field inside the semiconductor material. This electric field can get strong enough to cause electrons to detach from the atoms and start an avalanche of current. This leads to an abrupt increase in the reverse current, forming a potential barrier around the diode junction, which is known as the Zener voltage.

In operation, the MMBZ5240B-7-F is designed to break down when the applied reverse bias voltage exceeds the specified threshold voltage. When the reverse bias voltage exceeds the threshold voltage, the electric field inside the diode increases, resulting in an avalanche breakdown. This introduces a large amount of current known as the Zener current, which leads to a constant voltage drop across the diode. This voltage drop helps the device protect against overvoltages.

In addition to the overvoltage protection, the MMBZ5240B-7-F diode also provides electrostatic discharge (ESD) protection. The diode is designed to allow low levels of current to pass for protection against ESD voltages. As long as these voltages and currents do not exceed the rated maximum breakdown voltage and current, the device will remain safe and provide the required protection.

Advantages

The MMBZ5240B-7-F diode offers a wide operating temperature range of -55°C to +150°C. It also has a low forward voltage drop of 0.25V, which helps reduce power loss and improve electrical efficiency. The device also contains a highly reliable Zener impedance, providing a more consistent output voltage and improved reliability.

Conclusion

The MMBZ5240B-7-F zener diode is a reliable and efficient solution for ESD protection and overvoltage protection in a variety of applications. It features a low forward voltage drop, high-efficiency performance, wide operating temperature range, and a highly reliable Zener impedance. This device provides the required protection in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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