MMBZ5252ELT1G Discrete Semiconductor Products |
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| Allicdata Part #: | MMBZ5252ELT1GOSTR-ND |
| Manufacturer Part#: |
MMBZ5252ELT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE ZENER 24V 225MW SOT23-3 |
| More Detail: | Zener Diode 24V 225mW ±5% Surface Mount SOT-23-3 (... |
| DataSheet: | MMBZ5252ELT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Voltage - Zener (Nom) (Vz): | 24V |
| Tolerance: | ±5% |
| Power - Max: | 225mW |
| Impedance (Max) (Zzt): | 33 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 18V |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBZ5252 |
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MMBZ5252ELT1G is a type of diode that belongs to the subcategory of zener diodes. It is a single diode that is designed to have a low leakage current and a constant breakdown voltage. It is a small surface-mount SOD-323 package that is widely used in electronic circuits.
The MMBZ5252ELT1G has a zener breakdown voltage of 5.2 V with a maximum power dissipation of 500 mW. It has a reverse current of100uA, a forward voltage of 1.125 V @ 200 mA, and a junction temperature of -65 to +175 °C. This diode provides superior performance over traditional diodes due to its low-leakage currents.
MMBZ5252ELT1G is commonly used in regulating DC power supply outputs, electronic current limiting, and clamping. It is also used in signal conditioning circuits, providing the right levels of signals during signal processing, and in voltage-regulating circuits. Furthermore, the MMBZ5252ELT1G is also used in radio communication circuits and in audio and video signal processing equipment.
The MMBZ5252ELT1G is also used in different protection applications. It helps to protect circuits from overvoltage and reverse-voltage conditions. These conditions are often caused by ground faults, high-frequency noises, or electrostatic discharges in electronics. The diode prevents voltage from exceeding the recommended levels by clamping off any extra voltage that may be present, thus protecting the entire circuit.
The working principle of MMBZ5252ELT1G is quite simple and follows the same process of all zener diodes. During normal operation, when the voltage on the diode is below its nominal breakdown voltage (5.2V in this case), there is no current flowing through it and it basically acts like an open circuit. When the voltage reaches or exceeds the zener breakdown voltage, then the current starts to flow through the diode, creating a voltage drop.
The MMBZ5252ELT1G will maintain a 5.2V constant voltage drop, regardless of the changes in the load current or the operating voltage. This makes it ideal for voltage-regulating applications and helps to ensure that the output voltage is accurately held to the desired level. This is also why the MMBZ5252ELT1G is commonly used to regulate power supplies in many different types of equipment.
MMBZ5252ELT1G can also be used in RF applications. Its high-frequency properties make it suitable for RF circuits, as it has a broadband noise performance, which helps reduce interference. It is also known to be able to handle transient spikes better than standard diodes.
In conclusion, the MMBZ5252ELT1G is a useful component that is found in many electronic applications. It has a variety of uses, such as voltage regulation, protection, and RF signal conditioning. It is designed to have a low reverse current and constant breakdown voltage, which allow it to perform its intended functions well. Moreover, its small size makes it suitable for use in many surface-mount applications.
The specific data is subject to PDF, and the above content is for reference
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MMBZ5252ELT1G Datasheet/PDF