Allicdata Part #: | MMBZ5253B-HE3-08-ND |
Manufacturer Part#: |
MMBZ5253B-HE3-08 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 25V 225MW SOT23-3 |
More Detail: | Zener Diode 25V 225mW ±5% Surface Mount SOT-23-3 |
DataSheet: | MMBZ5253B-HE3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01889 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 25V |
Tolerance: | ±5% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 19V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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MMBZ5253B-HE3-08 Application Field and Working Principle
The MMBZ5253B-HE3-08 is a single zoning Diode designed specifically to provide highly stable and reliable current regulation in applications such as power supplies, battery charging and switching power supply. This device is also used in motor drive and industrial applications. The single zoning Diode also has low reverse voltage drop and tolerance within 0.1%, as well as low leakage current. The MMBZ5253B-HE3-08 is available in plastic packages, which are suitable for surface mounting.
Single Zener Diodes are controlled-avalanche breakdown diodes, diodes with zener breakdown, and tunnel diodes. Single Zener Diodes use two terminals, one anode and one cathode. They are able to pass current in both forward and reverse directions, but act as a diode when an adequate reverse voltage is applied. When the device is reversed biased, voltage increases across the diode until it reaches the breakdown voltage, also known as zener voltage. When an excess amount of current is applied, the chip will start to avalanche from breakdown allowing high reverse currents, which is known as the avalanche-zener breakdown. This characteristic makes Single Zener Diodes ideal for voltage regulation.
The working principle behind the Single Zener Diode MMBZ5253B-HE3-08 is based on the PN junction. It consists of a thin PN-junction which is connected between the anode and cathode terminals, it has a larger diffusion of majority carrier on the N-side compare to the P-side. This is mainly due to the junction\'s thinness which also allows current to pass in both directions. Due to its p-n junction, the device can be reverse biased causing an increase in voltage across the junction, and when the voltage reaches the avalanche voltage, current flows from anode to cathode. The avalanche voltage and current of this device can be controlled by changing the junction\'s field profile, which can be achieved by implementing various doping techniques.
The MMBZ5253B-HE3-08 application fields are wide variations of voltage regulation. One example of a product where the device can be used is a voltage regulator, where low voltage drop and low leakage current is necessary. The device can also be used in motor drive and industrial applications, which require high reliability and stability when regulating current.
The unique characteristics of the MMBZ5253B-HE3-08 Single Zener Diodes makes it the ideal choice for various applications. It has low reverse voltage drop and tolerance of 0.1%, as well as low leakage current and a high reliability, which makes it suitable for a number of applications. This device is available in plastic packages which are suitable for surface mounting, which furthers its versatility. These characteristics make the MMBZ5253B-HE3-08 device the ideal choice for applications requiring voltage regulation and current stability.
The specific data is subject to PDF, and the above content is for reference
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MMBZ5246BS-7 | Diodes Incor... | 0.06 $ | 1000 | DIODE ZENER ARRAY 16V SOT... |
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