Allicdata Part #: | MMBZ5253C-G3-08-ND |
Manufacturer Part#: |
MMBZ5253C-G3-08 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 25V 225MW SOT23-3 |
More Detail: | Zener Diode 25V 225mW ±2% Surface Mount SOT-23-3 |
DataSheet: | MMBZ5253C-G3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.02553 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 25V |
Tolerance: | ±2% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 19V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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The MMBZ5253C-G3-08 is a Zener diode from Diodes Incorporated, a leading global manufacturer and supplier of discrete solutions. It is a single diode designed to protect and regulate voltage in a wide range of applications. The MMBZ5253C-G3-08 is a 5.1V Zener diode with a 2% tolerance and a reverse voltage of 8V. It is designed to consolidate multiple low-power Zener diodes into a single device, saving space on the printed circuit board.
The MMBZ5253C-G3-08 has a variety of uses in many applications. It can be used as a bias regulator to set a reference level, or as a voltage protection device in automotive systems. It is also a versatile switching device for logic circuits, and can be used as a transient voltage suppressor to protect against spikes and surges. The device is also useful for product designs requiring a compact form factor, such as those involving cell phone components.
The MMBZ5253C-G3-08 Zener diode is constructed from a silicon body and an aluminum substrate. The aluminum substrate is formed into a unique shape and is coated with a strong material to protect the components. The silicon body is then attached to the substrate and is bonded with a solder connection. The main working principle of the MMBZ5253C-G3-08 is based on the breakdown voltage of the silicon body. When the reverse bias of the diode exceeds the silicon body breakdown voltage, electrons are injected into the silicon body and a Zener breakdown occurs, in which a Zener voltage is created.
The MMBZ5253C-G3-08 Zener diode is designed to withstand high temperatures and is able to operate at temperatures up to 175°C. The device features low leakage current and low noise, with power handling capabilities up to 200mW. It is also suitable for applications requiring a high level of reliability and quality control, including automotive, communications, and consumer electronics.
The MMBZ5253C-G3-08 Zener diode from Diodes Incorporated is a great choice for applications requiring high reliability, high temperature operation and a small form factor. It is a versatile device, able to perform as a bias regulator and voltage protection device, as well as a switching device and surge suppressor. With its low leakage current and low noise, the MMBZ5253C-G3-08 is a reliable and cost-effective choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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