MMBZ5253C-G3-08 Allicdata Electronics
Allicdata Part #:

MMBZ5253C-G3-08-ND

Manufacturer Part#:

MMBZ5253C-G3-08

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 25V 225MW SOT23-3
More Detail: Zener Diode 25V 225mW ±2% Surface Mount SOT-23-3
DataSheet: MMBZ5253C-G3-08 datasheetMMBZ5253C-G3-08 Datasheet/PDF
Quantity: 1000
15000 +: $ 0.02553
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 25V
Tolerance: ±2%
Power - Max: 225mW
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 19V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The MMBZ5253C-G3-08 is a Zener diode from Diodes Incorporated, a leading global manufacturer and supplier of discrete solutions. It is a single diode designed to protect and regulate voltage in a wide range of applications. The MMBZ5253C-G3-08 is a 5.1V Zener diode with a 2% tolerance and a reverse voltage of 8V. It is designed to consolidate multiple low-power Zener diodes into a single device, saving space on the printed circuit board.

The MMBZ5253C-G3-08 has a variety of uses in many applications. It can be used as a bias regulator to set a reference level, or as a voltage protection device in automotive systems. It is also a versatile switching device for logic circuits, and can be used as a transient voltage suppressor to protect against spikes and surges. The device is also useful for product designs requiring a compact form factor, such as those involving cell phone components.

The MMBZ5253C-G3-08 Zener diode is constructed from a silicon body and an aluminum substrate. The aluminum substrate is formed into a unique shape and is coated with a strong material to protect the components. The silicon body is then attached to the substrate and is bonded with a solder connection. The main working principle of the MMBZ5253C-G3-08 is based on the breakdown voltage of the silicon body. When the reverse bias of the diode exceeds the silicon body breakdown voltage, electrons are injected into the silicon body and a Zener breakdown occurs, in which a Zener voltage is created.

The MMBZ5253C-G3-08 Zener diode is designed to withstand high temperatures and is able to operate at temperatures up to 175°C. The device features low leakage current and low noise, with power handling capabilities up to 200mW. It is also suitable for applications requiring a high level of reliability and quality control, including automotive, communications, and consumer electronics.

The MMBZ5253C-G3-08 Zener diode from Diodes Incorporated is a great choice for applications requiring high reliability, high temperature operation and a small form factor. It is a versatile device, able to perform as a bias regulator and voltage protection device, as well as a switching device and surge suppressor. With its low leakage current and low noise, the MMBZ5253C-G3-08 is a reliable and cost-effective choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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