MMBZ5255B-E3-08

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The MMBZ5255B-E3-08 is a single-die zinc oxide (ZnO) based Zener diode. It is designed to provide a low leakage current rating and good power dissipation capability in a miniature surface mount SOD-123 package. This Zener diode is suitable for a wide range of applications including voltage regulation, voltage clamping, voltage switching and other inverse protection circuits.

Application Field

The MMBZ5255B-E3-08 is primarily used in voltage regulation applications. It is particularly suitable for portable consumer electronics and battery powered applications. The low leakage current rating of this diode makes it an ideal choice for voltage regulation in applications where power dissipation is at a premium. The small SOD-123 package and low Zener voltage ratings also make it suitable for consumer electronics where space is limited. Additionally, it can be used in voltage clamping and voltage switching applications, due to the high breakdown voltage.

Working Principle

The MMBZ5255B-E3-08 is a Zener diode, and its working principle is based on the Zener effect. When a reverse bias is applied to the diode, the depletion region at the junction expands. This creates an electric field that can cause electrons in the conduction band to be swept across the junction. When the reverse bias reaches the breakdown voltage of the diode, the junction is broken down and current starts to flow. This current flow causes the depletion region to further expand and a further avalanche contribution to the current flow. This avalanche contributes to the large increase in current when the breakdown voltage is reached, and it is this avalanche current that causes the Zener effect.

The Zener voltage, also known as the Zener breakdown voltage, is a measure of the voltage at which the Zener effect begins to occur. It is also the voltage at which the diode begins to conduct in reverse, and it is this voltage that is used to regulate the voltage in the circuit. The MMBZ5255B-E3-08 can be used to regulate a voltage that is lower than its Zener breakdown voltage. The degree of regulation is usually expressed as a ratio called the Zener regulation coefficient. This coefficient indicates the amount of current that the diode is able to pass in reverse, at a specified reverse voltage, in order to maintain regulation.

Conclusion

The MMBZ5255B-E3-08 Zener diode provides a low leakage current and good power dissipation capability in a small SOD-123 package. It is suitable for a wide range of applications including voltage regulation, voltage clamping and voltage switching, and is particularly well-suited to consumer electronics and battery powered applications. The working principle of the MMBZ5255B-E3-08 is based on the Zener effect, where a reverse bias causes the depletion region to expand and electrons to be swept across the junction resulting in an increase in current at the Zener breakdown voltage.

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