MMBZ5255BS-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Configuration:	2 Independent
Voltage - Zener (Nom) (Vz):	28V
Tolerance:	±5%
Power - Max:	200mW
Impedance (Max) (Zzt):	44 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 21V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	MMBZ5255BS

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Introduction:

MMBZ5255BS-7-F is a new type of diode, often referred to as a “Zener Diode Array”. It is a three stage Zener Diode Array and is available in an 8-pin SOIC (Small Outline Integrated Circuit) package. It is a very versatile device, designed for digital, analog and power applications.

Application Field:

The MMBZ5255BS-7-F is most often used in digital, analog and power applications. These applications include automotive, industrial control, process control, medical and communication systems. It is also utilized in voltage regulation, over-voltage protection, surge protection and noise filtering.The MMBZ5255BS-7-F has three individually connected Zener diodes and is intended to be used as a voltage regulator with a voltage of 24-33 volts. It is able to provide a constant output voltage over a wide range of operating temperatures and conditions. The MMBZ5255BS-7-F also has a low reverse leakage current.

Working Principle:

The MMBZ5255BS-7-F works on a principle known as "Zener Scattering". This effect occurs when a semiconductor junction is reverse-biased and a voltage sufficiently high enough appears across the junction that it creates a depletion region. In this depletion region, electrons from the P-type material are injected into the N-type material and create electron-hole pairs. The electron-hole pairs then recombine and the excess energy is released in the form of a photon. This photon then creates a Zener Diode. The MMBZ5255BS-7-F works by using the Zener Scattering effect to generate an output voltage. The output voltage is determined by the current passing through the Zener Diode. The Zener Diode must be forward-biased in order to get the desired Reuss Zone voltage. In addition to its voltage regulation capability, the MMBZ5255BS-7-F also has high-speed switching, low-noise operation, and low-power operation.

Advantages:

The MMBZ5255BS-7-F has several advantages over traditional Zener diodes. The most notable advantage is it’s small size. Since it is constructed on an 8-pin SOIC package, it is much smaller than traditional diodes and can be used in much tighter spaces. It also has an improved ESD performance. The low-noise operation, high-speed switching, and low power make it much more efficient than traditional diodes. Another advantage is the MMBZ5255BS-7-F’s high immunity to noise. This device is designed to offer a very low susceptibility to EMI (Electromagnetic Interference). This makes it an ideal choice for applications where noise suppression is essential. The MMBZ5255BS-7-F also offers better temperature stability and more accurate output voltage regulation than standard Zener diodes.

Conclusion:

The MMBZ5255BS-7-F is a three-stage Zener Diode Array, designed for digital, analog, and power applications. It is small, efficient, and has a wide range of features including low-noise operation, high-speed switching, low-power, and improved immunity to EMI. The device offers a constant output voltage over a wide range of temperatures and conditions, making it an ideal choice for a variety of applications from automotive to communication systems. Its small size and high efficiency make it an excellent choice for any design engineer.

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