| Allicdata Part #: | MMBZ4683-G3-18-ND |
| Manufacturer Part#: |
MMBZ4683-G3-18 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 3V 350MW SOT23-3 |
| More Detail: | Zener Diode 3V 350mW ±5% Surface Mount SOT-23-3 |
| DataSheet: | MMBZ4683-G3-18 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.02204 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 3V |
| Tolerance: | ±5% |
| Power - Max: | 350mW |
| Current - Reverse Leakage @ Vr: | 800nA @ 1V |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
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MMBZ4683-G3-18 is a modern Zener diode with a single built-in voltage regulator. It offers very low noise, high stability, and high temperature operation in small packages. The device has a range of features and applications, and is used in a wide variety of applications, from electronic circuits to power supplies and voltage regulators.
MMBZ4683-G3-18 diodes have a variety of working principles. The device consists of a Zener diode and a P-channel MOSFET on a single monolithic substrate. The Zener diode is constructed by diffusing a Zener diode into a P-channel MOSFET chip to form a single device. The P-channel MOSFET is operated in forward conduction and can provide very high reverse resistance when used with low voltage inputs. It also provides very good temperature stability when the input voltage is maintained within its rated limit. The Zener diode is designed to provide very good voltage regulation without excessive losses.
MMBZ4683-G3-18 diodes are used in a variety of applications, including:
- Power supplies and voltage regulators
- Electronic circuits
- Dynamic control circuits
- DC-DC converters
- High frequency power supplies
- Industrial and consumer electronics
MMBZ4683-G3-18 diodes are designed to provide very good voltage regulation without excessive losses. They are also designed to deliver very low noise, high stability and high temperature operation. The devices are designed for use in applications where the input voltage is maintained within its rated limit. They are also designed to work in harsh environments and to have a wide temperature range.
MMBZ4683-G3-18 diodes are also designed to provide very good performance in the presence of electrostatic discharge (ESD) and other transient signals. The devices are constructed with a combination of ESD protection and P-channel MOSFETs, which provide excellent ESD protection and low power dissipation. The devices are also designed to withstand high temperatures, as required in certain applications.
MMBZ4683-G3-18 diodes are used in a wide variety of applications, such as power supplies and voltage regulators, electronic circuits, dynamic control circuits, DC-DC converters, high frequency power supplies, and industrial and consumer electronics. The device is designed to provide very good voltage regulation without excessive losses and to be able to withstand high temperature operation. The device has excellent ESD protection and low power dissipation, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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MMBZ4683-G3-18 Datasheet/PDF