MMBZ5234B-HE3-08

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The MMBZ5234B-HE3-08 is a zener diode that belongs to the single zener diode category. A diode is an electrical device with two terminals (anode and cathode). It is characterized by its unidirectional current capability. The MMBZ5234B-HE3-08 works by allowing the current flow in a single direction.

The device can be used in switching regulators, battery chargers, buck converters, and other low power applications. The MMBZ5234B-HE3-08 can be used to protect delicate digital circuits from voltage spikes. It is also used in temperature sensors, LCDs, and LEDs. The device has a breakdown voltage of 8V, with a maximum power dissipation of 5mW, a maximum thermal resistance of 25 degrees Celsius/W, and a maximum reverse current of 10uA.

The zener diode works based on the Zener breakdown voltage phenomenon. When a reverse voltage is applied to the diode, the high electric field near the junction causes certain electrons to jump from the valence band to the conduction band, thus allowing a flow of current for the same applied voltage. The breakdown voltage of the device is 8V.

The device has low reverse leakage current, low noise, and fast switching speed. It is constructed with a zinc-doped diffusion, which helps in extending the lifetime of the diode. The silicon chip of the diode helps in reducing capacitance, which reduces the response time. Moreover, the device has a superior surface mount design. The device has a maximum junction temperature of 150 degrees Celsius, and it can operate between -55 and 150 degrees Celsius.

The MMBZ5234B-HE3-08 is a reliable and efficient device for low power applications. It is a suitable choice for maintaining constant voltage, low noise amplification, and protection of sensitive electronic components.

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