MMBZ5257B-7 Allicdata Electronics

MMBZ5257B-7 Discrete Semiconductor Products

Allicdata Part #:

MMBZ5257BDITR-ND

Manufacturer Part#:

MMBZ5257B-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 33V 350MW SOT23-3
More Detail: Zener Diode 33V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5257B-7 datasheetMMBZ5257B-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5257B
Description

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The MMBZ5257B-7 is a type of diode usually categorized as part of the Zener diode family group of semiconductor products. It is a single type of diode, meaning that it consists of two electrodes - the anode and the cathode - running through the middle of the device. The device is particularly effective for regulating and protecting electrical circuits alongside its bypassing, voltage clamping and surge protection applications.

The design and construction of a diode largely determine its capabilities and functions. MMBZ5257B-7 is a high breakdown Zener diode. It consists of a glass package and an etched junction electrode, combined with a high-grade silicon semiconductor material. Together, these components make up a diode that is suitable for a multitude of high-performance applications. Notable features of the MMBZ5257B-7 include a 5.6V nominal breakdown voltage, 5.1V maximum (tested at 5mA on DC current) and a 3.2 by 1.2mm size.

The minimal size and high tolerance accuracy make the MMBZ5257B-7 a popular choice for applications that require a reliable yet small form factor such as audio equipment, circuit boards, medical devices, electronic sensors, RFID, etc. Its operating temperature range of -65 to +175 degrees Celsius also provides a wide operating temperature range while ensuring no short-term or long-term degradation. Additionally, the diode has an acceptable power dissipation of 250mW and a maximum peak reverse current of 5.0A. These rated parametes provide assurance of well performing, high-performance functions even at extreme temperatures.

The underlying principle behind the MMBZ5257B-7\'s operation involves a low-voltage supply and applied voltage biasing across the diode. This causes a current to flow from the anode to the cathode, creating a depletion region within the semiconductor. When a reverse bias occurs, the majority carrier concentration changes across the junction, creating a Zener effect. The breakdown voltage depends on the concentration of majority carrier, with the maximum breakdown voltage being at the peak of the diagram. Essentially, the breakdown voltage governs the ability of the diode to protect against voltage over-lyrics and undesired current flow.

To recap, MMBZ5257B-7 is a single diode that utilizes the Zener effect to provide overload circuit protection while also offering excellent voltage regulation and power dissipation capabilities. It is designed to operate at a wide operating temperature range, and is suitable for applications where a small form factor is necessary. Thanks to its high tolerance accuracy, it can be used for a wide variety of functions including audio equipment, RFID, sensors, etc. With all this taken into account, it\'s no wonder that the MMBZ5257B-7 is one of the most popular diodes in its field.

The specific data is subject to PDF, and the above content is for reference

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