| Allicdata Part #: | MMBZ5257B-G3-08-ND |
| Manufacturer Part#: |
MMBZ5257B-G3-08 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 33V 225MW SOT23-3 |
| More Detail: | Zener Diode 33V 225mW ±5% Surface Mount SOT-23-3 |
| DataSheet: |  MMBZ5257B-G3-08 Datasheet/PDF |
| Quantity: | 1000 |
| 15000 +: | $ 0.02137 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 33V |
| Tolerance: | ±5% |
| Power - Max: | 225mW |
| Impedance (Max) (Zzt): | 58 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 25V |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
Description
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MMBZ5257B-G3-08 is a single zener diode designed to provide a regulated negative voltage in electronic circuits. It has the ability to regulate its own voltage to within a few millivolts of the Zenere Breakdown Voltage (VZ). This makes it ideal for applications where the need is to regulate the output voltage with extreme accuracy. Additionally, the low reverse current draw across the diode causes its output to remain steady over long periods of time, making it reliable and of high-quality performance.
The working principle of a MMBZ5257B-G3-08 is based on a P-N junction with the Diodes positive layer highly doped and the negative layer lightly doped, this keeps the diode shut in a reverse bias situation and very efficient. When forward bias is applied by a current flow, holes from the N layer combine with electrons from the P layer, creating an avalanche breakdown resulting in the circuit current flowing in the same direction as the forward bias. This appears as a voltage drop in the circuit. The zener breakdown voltage is the maximum, reliable voltage resulting from the zener breakdown. In the case of MMBZ5257B-G3-08, the breakdown voltage is guaranteed to be between 7.9 to 8.1 volts.
MMBZ5257B-G3-08 can be found in wide variety of electronic and antonymic applications. It can be used in voltage regulators, power supplies, battery-powered devices, automotive circuits and many electronic devices. One application example is the use of MMBZ5257B-G3-08 for voltages regulators for AC-DC and DC-DC power supplies. The device can be used to regulate the output voltage of a transformer and other components such as diodes, capacitors and resistors. Additionally, this diode can also be used to replace other components in circuits and reduce the number of components for space and cost-effectiveness.
In summary, MMBZ5257B-G3-08 is a single zener diode with a guaranteed breakdown voltage of between 7.9 to 8.1 volts. It is capable of regulating its own voltage to within a few millivolts of the Zenere Breakdown Voltage (VZ). The diode is reliable, efficient and can be used in a variety of electronic and antonymic applications such as battery-powered devices, AC-DC and DC-DC power supplies, voltage regulators and automotive circuits.
The specific data is subject to PDF, and the above content is for reference
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