MMBZ5258B-7-F Allicdata Electronics

MMBZ5258B-7-F Discrete Semiconductor Products

Allicdata Part #:

MMBZ5258B-FDITR-ND

Manufacturer Part#:

MMBZ5258B-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 36V 350MW SOT23-3
More Detail: Zener Diode 36V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5258B-7-F datasheetMMBZ5258B-7-F Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 36V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 27V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5258B
Description

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Introduction

MMBZ5258B-7-F is a single Zener diode that works mainly as voltage stabilization and regulation device. It is one of the components widely used in electronic circuits, allowing a current to pass in one direction while blocking it in the opposite direction. It is also used in limiting and clamping, protecting circuits from excessive voltage.

Application Fields

MMBZ5258B-7-F is mainly used in voltage stabilization and regulation. It is often used to regulate the voltage in AC power supplies for low-power battery-powered applications. It is also used in transient voltage suppression or to protect circuits from very high, potentially damaging voltages. The Zener diode also finds applications in voltage regulation and stabilization, current regulation and temperature compensation.

Another application is for voltage reference. When placed in a potential divider arrangement, MMBZ5258B-7-F can provide a stable voltage reference for further components. It is also used as a switching device in logic gates, or to isolate components from its power supply.

Working Principle

The MMBZ5258B-7-F works by exploiting the properties of p-n junctions. It is formed by an N-type region of silicon material sandwiched between sections of P-type material. A silicon material contains a number of P-type and N-type semiconductor atoms. In the reverse bias mode, an electric field forces carriers away from the junction, which causes depletion of the conducting material close to the junction. This results in a diode or rectifier action with a very low resistance, allowing current to pass in one direction and become blocked in the other direction.

The MMBZ5258B-7-F is designed to have a particular junctions potential value (Vz) at which a breakdown of the depletion layer occurs, allowing the current to increase rapidly. At this point, the breakdown voltage remains nearly constant over a range of current up to the breakdown current IB. This constant voltage characteristic over a range of current is known as the Zener breakdown.

Conclusion

MMBZ5258B-7-F is a single Zener diode with a wide range of applications. It is designed to regulate the current in AC power supplies for low-power applications, used in transient voltage suppression and circuit protection, and for voltage reference. It works by exploiting the properties of p-n junctions to allow current to pass in one direction, become blocked in the other direction, and remain constant in Zener breakdown mode.

The specific data is subject to PDF, and the above content is for reference

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