MMBZ5259B-7 Allicdata Electronics
Allicdata Part #:

MMBZ5259B-7-ND

Manufacturer Part#:

MMBZ5259B-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 39V 350MW SOT23-3
More Detail: Zener Diode 39V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5259B-7 datasheetMMBZ5259B-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 39V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 30V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBZ5259B
Description

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The MMBZ5259B-7 is a wattage uni-directional, voltage based device that belongs to the diodes - zener - single category. It is designed with a zener breakdown mechanism, that enables it to drop greater than 7.5 volts. This makes it ideal for a wide range of applications, such as voltage regulation and stabilizing circuit, network isolation systems, overvoltage and transient protection, automotive electronics, and surge suppressors.

The MMBZ5259B-7 features an integrated diode structure and a symmetrical, double tab terminal structure design that allows for easy mounting on printed circuit boards. This diode exhibits excellent performance characteristics, such as low dynamic impedance and low noise levels. Its long term stability and superior zener breakdown voltage accuracy ensures reliability.

The MMBZ5259B-7 has a PN junction with a zener breakdown voltage of at least 7.5 volts and an operating temperature range of -65 to +150 degrees Celsius. It has a good power dissipation rating of 500mW with a reverse current leakage of less than 5uA at an ambient temperature of 25 degrees Celsius. It also has an excellent reverse voltage surge capability of more than 400V.

The MMBZ5259B-7 works on the principle of a reverse-breakdown voltage element. This is a voltage-controlled device which, when the applied reverse voltage exceeds a certain level, allows a relatively large current to flow from the PN junction. When the voltage increases, the amount of current carried increases at an increased rate, allowing for a rapid response, as well as high stability and low noise.

The MMBZ5259B-7 has a wide range of applications. It is most commonly used in voltage regulation and stabilizing circuits, as well as in automotive electronics and overvoltage and transient protection. It can also be used in network isolation systems, surge suppressors, pulse shaping and signal processing applications. With its excellent performance characteristics, this diode is a reliable choice for a variety of applications.

In conclusion, the MMBZ5259B-7 is an efficient and reliable wattsunidirectional voltage-based diode belonging to the zenersingle category. It is designed with a zener breakdown mechanism which allows it to drop greater than 7.5 volts and is suitable for a wide range of applications, such as voltage regulation and stabilizing circuits, network isolation systems, overvoltage and transient protection, automotive electronics, and surge suppressors. The device features excellent performance characteristics, such as low dynamic impedance and low noise levels, as well as an excellent reverse voltage surge capability. Its long term stability and superior zener breakdown voltage accuracy ensures reliability in its usage.

The specific data is subject to PDF, and the above content is for reference

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