MMBZ5243B-7 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz):	13V
Tolerance:	±5%
Power - Max:	350mW
Impedance (Max) (Zzt):	13 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 9.9V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBZ5243B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMBZ5243B-7 Application Field and Working Principle

MMBZ5243B-7 is a diode within a Single Zener class, part of a series of semiconductor products manufactured by ON Semiconductor. This diode is an efficient and cost effective device with a maximum operating power of 600mW at an operating temperature of 175°C. It is ideal for applications such as voltage clamping and voltage regulation. Its low-power operation and space-savings make it suitable for a wide range of applications including automotive, consumer, and industrial applications.

Features

The MMBZ5243B-7 diode has several features that make it an attractive option for voltage regulation or voltage clamping applications. It has a low Zener impedance that is useful for ensuring steady voltage regulation and clamping. The diode also features a temperature coefficient of less than 0.005 at 25°C, which helps maintain the voltage level more accurately over the operating temperature range. This diode also has a reverse breakdown voltage of 5.2 V with a maximum operating power of 600 mW.

Applications

The MMBZ5243B-7 diode is specifically designed for voltage regulation applications, including voltage clamping and voltage regulation. It can be used for applications where Zener impedance must be kept low for precise voltage regulation or to regulate the voltage in switching regulator circuits. The diode’s low power consumption makes it ideal for consumer electronics and automotive applications, such as in air-conditioning systems and portable electronics.

Working Principle

The working principle of the MMBZ5243B-7 diode is based on the principle of a PN-junction. When a potential difference is applied across a PN-junction, a depletion zone is formed on the edge of the junction. This creates a barrier to the flow of majority charges. The concentration of majority charge carriers (electrons or holes) across the PN-junction is different in the depletion zone and on either side of the junction. Due to this difference, a potential is created across the junction.When the Vz voltage is applied to the PN-junction of the MMBZ5243B-7 diode, the applied voltage creates a junction potential that forces the majority charge carriers to the depletion zone. This process continues up until the applied voltage reaches the PN-junction’s breakdown voltage, at which point the junction potential breaks down and unintentionally causes the majority charge carries to flow in the opposite direction. As a result, the diode acts as a voltage regulator, ensuring an output voltage of Vz.

Conclusion

The MMBZ5243B-7 diode is a low-power, cost-effective diode that can be used for a wide range of applications. It features a low Zener impedance and temperature coefficient, and its reverse breakdown voltage of 5.2 V with a maximum operating power of 600 mW make it an ideal choice for voltage regulation and voltage clamping applications. The working principle of the diode is based on the PN-junction principle, where the PN-junction potential is used to force majority charge carriers to the depletion zone until the breakdown voltage is reached and charge carriers unexpectedly flow in the opposite direction, creating a regulated and clamped output voltage of Vz.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description