MML09211HT1 Allicdata Electronics

MML09211HT1 RF/IF and RFID

Allicdata Part #:

MML09211HT1DKR-ND

Manufacturer Part#:

MML09211HT1

Price: $ 5.45
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: IC LNA AMP 21DBM GAAS DFN8
More Detail: RF Amplifier IC GSM, LTE, W-CDMA 400MHz ~ 1.4GHz 8...
DataSheet: MML09211HT1 datasheetMML09211HT1 Datasheet/PDF
Quantity: 544
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 4.94550
10 +: $ 4.53537
25 +: $ 4.12297
100 +: $ 3.71070
250 +: $ 3.40150
500 +: $ 3.09226
Stock 544Can Ship Immediately
$ 5.45
Specifications
Series: --
Packaging: Digi-Reel® 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Frequency: 400MHz ~ 1.4GHz
P1dB: 20dBm
Gain: 21.3dB
Noise Figure: 0.66dB
RF Type: GSM, LTE, W-CDMA
Voltage - Supply: 5V
Current - Supply: 60mA
Test Frequency: 1.4GHz
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x2)
Description

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RF Amplifiers

MML09211HT1 application field and working principle

RF amplifiers are an important category of devices widely used in many electronic applications. The RF Amplifier MML09211HT1 has developed its application field in many device manufacturers.MML09211HT1 is a high-power radio frequency (RF) amplifier with a maximum output power of over 500W. It is a very efficient RF amplifier, with power efficiency up to 80%. It is popular among many radio frequency transmitter applications, such as radio station transmitter, satellite communication transmitter, military and defense radar, etc. The working frequency range of this amplifier is from 18MHz to 1000MHz, which satisfies the needs of many modern applications.The MML09211HT1 amplifier utilizes Gallium Nitride (GaN) technology, allowing it to provide wideband transmission with low distortion. Its high-power output is combined with a variable gain range of up to 30dB. With built-in power regulation features such as manual or automatic gain control (AGC) and wide dynamic range, this amplifier is suitable for wide range of modulation types and bit rates.The working principle of the MML09211HT1 is based on its core element, a GaN transistor. The transistor will be biased with a gate bias voltage, allowing it to have a consistent and reliable current flow between its drain and source terminals. This, in turn, will produce an amplified version of the input signal at the output stage of the amplifier.Apart from the power output, the MML09211HT1 amplifier can also provide high-end features such as temperature and shock protection, adjustable RF overload protection, electronic-level optimization and even a built-in harmonic filter. With these features, this high-power RF amplifier guarantees optimal and reliable performance in almost any application.In conclusion, the MML09211HT1 high-power RF amplifier can provide many benefits for various applications, such as radio station transmitters, satellite communication, and military defense systems. With its wide frequency range, high output power, and excellent power efficiency, the MML09211HT1 offers excellent features making it an ideal device for many applications.

The specific data is subject to PDF, and the above content is for reference

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