MML09211HT1 RF/IF and RFID |
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Allicdata Part #: | MML09211HT1DKR-ND |
Manufacturer Part#: |
MML09211HT1 |
Price: | $ 5.45 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC LNA AMP 21DBM GAAS DFN8 |
More Detail: | RF Amplifier IC GSM, LTE, W-CDMA 400MHz ~ 1.4GHz 8... |
DataSheet: | MML09211HT1 Datasheet/PDF |
Quantity: | 544 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.94550 |
10 +: | $ 4.53537 |
25 +: | $ 4.12297 |
100 +: | $ 3.71070 |
250 +: | $ 3.40150 |
500 +: | $ 3.09226 |
Specifications
Series: | -- |
Packaging: | Digi-Reel® |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 400MHz ~ 1.4GHz |
P1dB: | 20dBm |
Gain: | 21.3dB |
Noise Figure: | 0.66dB |
RF Type: | GSM, LTE, W-CDMA |
Voltage - Supply: | 5V |
Current - Supply: | 60mA |
Test Frequency: | 1.4GHz |
Package / Case: | 8-VFDFN Exposed Pad |
Supplier Device Package: | 8-DFN (2x2) |
Description
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RF Amplifiers
MML09211HT1 application field and working principle
RF amplifiers are an important category of devices widely used in many electronic applications. The RF Amplifier MML09211HT1 has developed its application field in many device manufacturers.MML09211HT1 is a high-power radio frequency (RF) amplifier with a maximum output power of over 500W. It is a very efficient RF amplifier, with power efficiency up to 80%. It is popular among many radio frequency transmitter applications, such as radio station transmitter, satellite communication transmitter, military and defense radar, etc. The working frequency range of this amplifier is from 18MHz to 1000MHz, which satisfies the needs of many modern applications.The MML09211HT1 amplifier utilizes Gallium Nitride (GaN) technology, allowing it to provide wideband transmission with low distortion. Its high-power output is combined with a variable gain range of up to 30dB. With built-in power regulation features such as manual or automatic gain control (AGC) and wide dynamic range, this amplifier is suitable for wide range of modulation types and bit rates.The working principle of the MML09211HT1 is based on its core element, a GaN transistor. The transistor will be biased with a gate bias voltage, allowing it to have a consistent and reliable current flow between its drain and source terminals. This, in turn, will produce an amplified version of the input signal at the output stage of the amplifier.Apart from the power output, the MML09211HT1 amplifier can also provide high-end features such as temperature and shock protection, adjustable RF overload protection, electronic-level optimization and even a built-in harmonic filter. With these features, this high-power RF amplifier guarantees optimal and reliable performance in almost any application.In conclusion, the MML09211HT1 high-power RF amplifier can provide many benefits for various applications, such as radio station transmitters, satellite communication, and military defense systems. With its wide frequency range, high output power, and excellent power efficiency, the MML09211HT1 offers excellent features making it an ideal device for many applications.The specific data is subject to PDF, and the above content is for reference
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