MMPQ2907

The MMPQ2907 is a member of a family of two-stage bipolar transistor arrays that is designed to provide frequency limiting, impedance matching and signal isolation in a medium power package. The MMPQ2907 is characterized by extremely low operating bias current over a wide temperature range and its oxide-isolated construction allows very high isolation levels at much higher frequencies than traditional air-gap technology.The MMPQ2907 is a very useful component in a wide range of applications, including power amplifier design, signal conditioning, signal mixing and RF RF switching. It also finds use in instrumentation and data acquisition circuits, audio and video circuits, line drivers and power-wired logic circuits.The MMPQ2907 is a two-stage bipolar transistor array with a common-emitter (CE) configuration. Each transistor has a separate base-emitter (BE) junction and a common-collector (CC) junction. The BE junction provides the base-emitter current necessary to commence transistor operation. The CC junction provides the collector current that drives the collectors of the two transistors.The common-emitter stage of the MMPQ2907 provides a significant contribution to the device performance and can be used to limit the passband frequency response. The device features an on-chip emitter resistance (R E ) which increases the time-integrated output current. The time-integrated current limits the passband frequency response.The MMPQ2907 has two integral biasing networks, one for each transistor. The biasing networks comprise two resistors and two capacitors, and allow adjustable adjustment of the collector-emitter voltage for both transistors. The bias networks are connected to the output terminals of the device and the bias adjust is made by turning the external bias potentiometer. The MMPQ2907 is a two-stage bipolar transistor array device, with a common-emitter configuration. It provides frequency limiting, impedance matching and signal isolation in a medium-power package. It features an on-chip emitter resistance for passband frequency response, and is characterized by low operating bias current over a wide temperature range. An integral biasing network, which is adjustable by an external potentiometer, allows adjustment of collector-emitter voltage of the two transistors. In addition, its oxide-isolated construction provides very high isolation levels at much higher frequencies than traditional air-gap technology.

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MMPQ2907A	ON Semicondu...	--	1000	TRANS 4PNP 60V 0.6A 16SOI...
MMPQ3906	ON Semicondu...	--	1000	TRANS 4PNP 40V 0.2A 16SOI...
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MMPQ6700	ON Semicondu...	--	1000	TRANS 2NPN/2PNP 40V 0.2A ...
MMPQ2907	ON Semicondu...	0.0 $	1000	TRANS 4PNP 40V 0.6A 16SOI...
MMPQ3906 TR13	Central Semi...	0.74 $	1000	TRANSISTOR PNP QUAD 16SOI...
MMPQ2222AR1	ON Semicondu...	--	1000	TRANS 4NPN 40V 0.5A 16SOI...