Allicdata Part #: | MMPQ6502TR13TR-ND |
Manufacturer Part#: |
MMPQ6502 TR13 |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANSISTOR QUAD SMD |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 1A... |
DataSheet: | MMPQ6502 TR13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.66977 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN, 2 PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.4V @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 30nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 300mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
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The MMPQ6502 TR13 is a transistor array belonging to the bipolar junction transistor (BJT) family. It is used in a variety of applications from low frequency radio signal to high frequency signal amplification.
A BJT is an arrangement of two or more transistors that are connected in a way to assist with the flow of current. They are commonly used to amplify signals in radio frequency applications. The MMPQ6502 TR13is a four transistor array with an NPN (Negative Positive Negative) configuration. It is designed to provide excellent linear gain and has low noise figures. It is also designed to operate at high frequency with a high slew rate and low output impedance.
The MMPQ6502 TR13 is typically used in applications that require high voltage or current gain. These include radio broadcast or audio amplifiers, oscillators, modulators, receivers, amplifiers, and other high frequency signal processing applications. It is also used in a variety of industrial, medical, and communication systems.
In a BJT array, each transistor consists of an emitter, collector and a base. The emitter is where the current flows from, the collector is where the current is collected and the base is the controlled point between the two. The transistors are arranged in a specific configuration that allows for each transistor to work in combination with the others. This configuration allows for a large amount of current to be amplified with very minimal noise.
The working principle of the MMPQ6502 TR13 is fairly simple. When a voltage is applied to the base, a current is generated which creates a voltage drop across the collector-emitter junction. This voltage drop results in a large current flow from the collector to the emitter. This is what creates the amplified signal.
The power dissipation capability of the MMPQ6502 TR13 is also very impressive. It is rated at up to 2W with a maximum junction temperature of 175°C. This makes it a great choice for applications requiring a large amount of current gain.
In addition to its high current gain and power dissipation capability, the MMPQ6502 TR13 also offers excellent linearity and high frequency operation. These features make it a great choice for radio frequency amplifiers, modulators, and receivers.
The MMPQ6502 TR13 is a great choice for a variety of applications that require high voltage or current gain. It offers excellent linearity and high frequency operation, as well as a high power dissipation capability. This makes it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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