Allicdata Part #: | MP18021HQ-A-LF-P-ND |
Manufacturer Part#: |
MP18021HQ-A-LF-P |
Price: | $ 0.99 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Monolithic Power Systems Inc. |
Short Description: | IC GATE DRIVER |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-QFN (3x... |
DataSheet: | MP18021HQ-A-LF-P Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 0.90405 |
Logic Voltage - VIL, VIH: | 1V, 2.4V |
Supplier Device Package: | 8-QFN (3x3) |
Package / Case: | 8-VDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 12ns, 9ns |
High Side Voltage - Max (Bootstrap): | 100V |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 2.5A, 2.5A |
Series: | -- |
Voltage - Supply: | 9 V ~ 18 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MP18021HQ-A-LF-P is a high-performance gate driver integrated circuit (IC) from Monolithic Power Systems that is part of their Standard Gate Driver family. It is a integrated circuit specifically designed for driving insulated gate bipolar transistor (IGBT) and insulated gate commutated thyristor (IGCT) gate signals with low gate leakage and turn-on/turn-off times. The IC is optimized for quick turn-on and turn-off time and the low gate leakage current ensures the power loss of the power elements is minimized.
The MP18021HQ-A-LF-P is designed to work with up to 1000 volts and provide 8 amperes of peak current and ensures a high switching speed. The IC has an integrated high side/low side driver structure that can support both unipolar and bipolar applications. The lowgate leakage current allows stable performance over temperature and reliable operation of the device in a wide range of voltages and power requirements. The high speed response and low output capacitance of the driver helps reduce power loss and improve device efficiency.
The MP18021HQ-A-LF-P has a wide range of applications including power conditioners, power switching circuits, air conditioners, power inverters and motor drives. It can also be used to drive the gates of IGBTs and IGCTs in applications such as renewable energy, electric vehicles, and grid infrastructure. Additionally, it can be used to control power flows from solar or wind energy sources in smart grid applications.
The working principle of the MP18021HQ-A-LF-P is that it controls the switching speed and gate leakage current by using a high side/low side MOSFET. It provides a two-level output between the two MOSFETS which drives the IGBT/IGCT gates. The IC has two voltage inputs, one for the low side gate drive and one for the high side gate drive. When the IC receives a logic high signal, the high side transistor turns on and the low side transistor turns off and vice versa. The turn-on delay time of the IC is determined by the value of the on-chip delay capacitor and its value can be adjusted depending on the application.
The MP18021HQ-A-LF-P is an effective, efficient and versatile gate driver IC that can be used in a wide variety of applications. Its integrated high side/low side driver structure ensures that the correct voltage signals are sent to the gate of the power elements and the low gate leakage current ensures minimal power loss over time. Its fast switching speeds and low output capacitance facilitates a reduction in losses and increased efficiency making it an ideal choice for power electronic systems and motor drives.
The specific data is subject to PDF, and the above content is for reference
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