| Allicdata Part #: | MPF4393-ND |
| Manufacturer Part#: |
MPF4393 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | JFET N-CH 30V 0.35W TO92 |
| More Detail: | JFET N-Channel 30V 350mW Through Hole TO-92-3 |
| DataSheet: | MPF4393 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Voltage - Breakdown (V(BR)GSS): | 30V |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id: | 500mV @ 10nA |
| Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 15V (VGS) |
| Resistance - RDS(On): | 100 Ohms |
| Power - Max: | 350mW |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | MPF4393 |
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The MPF4393 is a high-performance N-channel JFET (junction field-effect transistor) device. The device has been designed to offer superior performance in RF applications, with a wide range of circuit configurations possible. It is suitable for low-noise amplifier designs, and can be used to replace bipolar transistors in many applications.
A JFET is a type of transistor, with a channel connecting two source terminals. The channel acts as a hollow conducting tube, allowing holes to move through it freely. This channel is normally blocked by a reverse-biased gate-source junction, which controls the current flowing from the source to the drain. This voltage-dependent resistance of the channel between the terminals is what makes a JFET an effective device for amplifying and switching signals.
The MPF4393 is an N-type or depletion-mode JFET. This type of device has a negative impedance characteristic, meaning that the resistance of the channel decreases as the voltage across it increases. This makes the device suitable for low-noise amplifiers and other signal processing applications. In a low-noise amplifier design, the device is used to increase the resistance between the source and drain, allowing it to reject unwanted signals and reduce output noise.
The MPF4393 offers a wide range of features that make it suitable for use in many RF applications. It offers a very low noise figure, with minimum noise figures as low as 0.2 dB and maximum noise figures as low as 0.3 dB. In addition, it offers a large voltage range, with supply voltages ranging from 3V to 15V and maximum operating voltages of up to 500V. The device also has a high input impedance, allowing it to be used with higher-impedance circuits.
The MPF4393 is designed for ease of use and flexibility in circuit designs. It is available in surface-mount and through-hole packages, and can be used in a wide range of circuit configurations, including common-source, common-gate, and cascode. The device also has a wide range of operating temperature ranges, from - 40°C to + 150°C.
In summary, the MPF4393 is a high-performance N-channel JFET device. It has a wide range of features that make it suitable for use in low-noise amplifiers and other signal processing applications. It offers a wide range of circuit configurations, a wide supply voltage range, and a high input impedance. It is available in both surface-mount and through-hole packages, and can be used in a wide range of temperature ranges.
The specific data is subject to PDF, and the above content is for reference
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MPF4393 Datasheet/PDF