MPF4393G

The MPF4393G is a multi-gate field-effect transistor (MOSFET) produced by THE SINGONY Electronic Technology Company ("STC"), which is a leading manufacturer of semiconductor components. The MPF4393G is one of STC\'s family of high-performance low-voltage gate-level JFETs, which are designed for use in high-speed, low-power applications. The MPF4393G is a junction field-effect transistor that is composed of two independent junction gates that can be used independently from each other. The MPF4393G is an depletion-mode JFET, meaning that the two gates have a high impedance when the device is in the off-state and requires a negative input signal to turn on.The MPF4393G has a wide range of uses in a variety of electronics applications. Its small size, relatively low power consumption and high operating temperature range make it ideal for applications such as power converters, power amplifiers, power switching and audio amplifiers. It is also used in dynamic RAM and voltage followers, where its low input capacitance and low output capacitance enables fast switching speeds and low power consumption. Its low input capacitance also makes it well suited for use in analog circuits where it can provide a low-cost solution for voltage and current amplification.The MPF4393G\'s operating principle is based on the field-effect transistor (FET) technology, in which the various semiconductor components are mixed and matched to form the required electrical characteristics. The two independent gates are the source and the drain, and the transistor is operated by the voltage from one of the gates being applied to the other gate, which produces a current through the device. In the depletion-mode, the impedance of both gates is very high, and therefore a pulse must be applied to the gate to initiate a current flow. Once the current has been established, the voltage on the gate can then be adjusted, allowing precise control of the output current.The performance of the MPF4393G is based on the overall gate properties. The gate capacitance of the device is an important parameter, as this determines the amount of charge transfer available to the input and output of the transistor. Additionally, the gate-to-drain capacitance is a critical factor in determining the operating speed of the device, as a small capacitance can lead to increased switching times and increased power consumption.The high-speed switching ability and low-power consumption of the MPF4393G make it an ideal choice for use in a variety of modern electronics applications. It is well suited for high-speed automotive and radar applications, and its wide operating temperature range allows it to be used in harsh environments. Its low-cost and ease of use also make it an attractive solution for a variety of other sensitive industrial applications.

MPF4392	ON Semicondu...	--	1000	JFET N-CH 30V 0.35W TO92J...
MPF4392G	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 0.35W TO92J...
MPF4393	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 0.35W TO92J...
MPF4393G	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 0.35W TO92J...
MPF4393RLRPG	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 0.35W TO-92...
MPF4200	3M	2.08 $	1000	MPF4200 PRIVACY SHT 397MM...
MPF480D4	Sensata-Cryd...	0.0 $	1000	RELAY SOLID STATE PCB MOU...