Allicdata Part #: | MPQ3725A-ND |
Manufacturer Part#: |
MPQ3725A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS 4NPN 50V 1A |
More Detail: | Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 1A... |
DataSheet: | MPQ3725A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | 4 NPN (Quad) |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 14-DIP (0.300", 7.62mm) |
Supplier Device Package: | TO-116 |
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The MPQ3725A is a bipolar transistor array designed to provide long-term reliability and stable performance in high-current and high-temperature applications. This device is a versatile and efficient power semiconductor technology that helps reduce power consumption and improve performance in electric vehicles, industrial motors, and other off-highway applications. The versatility of this device also makes it a popular choice for electric vehicles, automation and robotics, medical, aerospace and military applications.The MPQ3725A is designed as an array of six NPN bipolar transistors. The device is constructed using two semiconductor substrates, which are arranged in a stacked configuration. The semiconductor substrates are composed of two layers of gallium arsenide (GaAs) and gallium nitride (GaN). The GaAs substrate contains the top and bottom transistors, while the GaN substrate contains the other four transistors. The bottom three transistors are connected in series, while the top three are connected in parallel.Each transistor in the array is capable of carrying a current up to 8.5 amperes, with a maximum voltage rating of 30 volts. The device is designed to provide a wide range of capabilities and can be used to provide high power, high frequency, and low noise characteristics. The device is also designed to provide a low on-state resistance and a low quiescent current for improved efficiency.The MPQ3725A offers several advantages to the user, such as improved on-state resistance, higher switching speeds, better noise immunity and improved power efficiency. The device is designed to be compatible with a wide range of gate drivers, from standard TTL to a range of advanced high-speed transistors.The MPQ3725A is designed to provide stable and reliable performance, even in high temperatures. The device is constructed using special thermally stable and highly conductive dielectric materials that help to minimize thermal stress and reduce power losses. The device also has a built-in temperature compensation circuit, which helps to keep the device\'s performance stable and reliable, even in conditions of high temperature cycling and thermal shock.The device can operate in both DC and AC applications, at frequencies up to 400 kHz. The device has a wide range of gate drive requirements and can be used with a range of AC and DC gate drives. The device also provides an optional ESD protection circuit, which protects the device from overvoltage, overcurrent, and ESD events.In summary, the MPQ3725A is a versatile and efficient power semiconductor technology that helps reduce power consumption and improve performance in electric vehicles, industrial motors, and other off-highway applications. The device is designed to provide long-term reliability and stable performance in high-current and high-temperature applications. The MPQ3725A is a reliable and high-performance solution that offers great flexibility, reliable performance and high power efficiency.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...