MPQ3762

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	4 PNP (Quad)
Current - Collector (Ic) (Max):	--
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Power - Max:	3W
Frequency - Transition:	150MHz
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	14-DIP (0.300", 7.62mm)
Supplier Device Package:	TO-116

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The MPQ3762 is a type of transistor array in the bipolar junction transistor (BJT) family. It is a high power BJT which has many applications in switching, level shifting and amplifying applications. This article will discuss the application field and working principle of the MPQ3762.

Applications

The MPQ3762 is a versatile transistor array, suitable for a variety of applications due to its high gain, excellent thermal stability and low collector-emitter saturation voltage. Its main uses are in the fields of power control, power conditioning and power amplifying. The power control applications of the MPQ3762 include motor and light control, relay control and battery-regulated DC to DC conversion. The power conditioning applications include power reversing, DC chopper and current limiting circuits. The power amplifier applications include high frequency amplifiers and class B/C amplifiers.

Working Principle

The MPQ3762 is a BJT array which consists of two NPN transistors connected in a Darlington configuration. This configuration results in a much higher current gain and much higher switching speed compared to the standard single transistor configuration. The transistors operate by allowing holes and electrons to flow between the base, emitter and collector junctions. When electric current flows through the base-emitter junction, holes from the base region are attracted to the emitter, resulting in an increased amount of electrons at the collector. This increased electron flow, or current, is what gives the transistor its amplification capability. The Darlington configuration of the MPQ3762 does the same function as a single transistor, but with one additional benefit. Each transistor in the array will amplify the current from the base, giving the output current of the transistor array an increased amplification level compared to a single transistor.

Conclusion

The MPQ3762 is a bipolar junction transistor (BJT) array, designed for use in power control, power conditioning and power amplifying applications. It is composed of two NPN transistors connected in a Darlington configuration, which results in a higher current gain and faster switching speed than that of a single transistor. The transistors operate by allowing holes and electrons to flow between the base, emitter and collector junctions, and their amplification capability increases with their Darlington configuration.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description