MPS3563G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MPS3563G is an NPN Silicon RF transistor designed for a wide range of RF and signal applications. It is commonly used in transformer driven, broadband amplifiers in the application field of up to 800 MHz Television system, Amateur Radio, and VHF/UHF transmitter or receivers. It is also used in linear applications such as wideband amplifiers, wideband oscillators, and frequency multipliers.

The MPS3563G is an NPN silicon planar epitaxial transistor with high gain capability, high efficiency, and great stability of performance over time and temperature. The semiconductor device is equipped with an ultra miniature surface mount package, making it ideal for space-limited, high-density circuit applications. The two-terminal package also eliminates the need for additional components, reducing the manufacturing cost.

The MPS3563G is designed to operate in the frequency range of 70 MHz to 1000 MHz and under Class A operation. Its maximum frequency of oscillation is 1200MHz. Due to its high gain and wide frequency response, the MPS3563G is capable of providing the best performance for small signal amplifier applications. The device offers high gain of 14.8 dB at 800 MHz with a typical output power of 11 dBm and a typical drain efficiency of 35%. It also offers high linearity and a low noise figure.

The MPS3563G also has a wide range of supply voltage, making it suitable for a variety of applications. Its collector-emitter voltage (Vce) is 300V and its emitter-base voltage (Veb) is 5V. Its total power dissipation is 500mW. Its electrical characteristics such as its voltage gain, input resistance, input capacitance, and output resistance are also optimized for RF amplification.

The MPS3563G’s working principle is based on the principles that the flow of electrons is dependent on the input voltage and the strength of the electric field created between the collector and the base of the transistor. The internal structure of the MPS3563G comprises two differently doped (N-type and P-type) regions of semiconductor material that create an electric field when a small signal current is supplied from the base to the collector. This electric field creates a barrier between the two regions, allowing electrons to flow from one region to the other when sufficient voltage is applied. The current flow is controlled by the input signal voltage, allowing for signal amplification.

The MPS3563G is an efficient signal amplifier. It is commonly used in RF applications, as well as signal amplification. It is a versatile device capable of handling a wide range of signal amplification applications. Its small size and simple design make it cost-effective and easy to install in circuit boards.

The specific data is subject to PDF, and the above content is for reference