MPS3646RLRAG Allicdata Electronics
Allicdata Part #:

MPS3646RLRAG-ND

Manufacturer Part#:

MPS3646RLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 15V 0.3A TO-92
More Detail: Bipolar (BJT) Transistor NPN 15V 300mA 350MHz 625m...
DataSheet: MPS3646RLRAG datasheetMPS3646RLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Power - Max: 625mW
Frequency - Transition: 350MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS3646
Description

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The MPS3646RLRAG is a silicon NPN transistor classified as part of the single bipolar junction transistor (BJT) family. This type of BJT is commonly used in different applications where the dissipation of electrical power needs to be mitigated through transfer or amplification of signal or the control of a load current. It has four legs and has a variety of electrodes specially designed to facilitate their different abilities.

The main purpose of a BJT is to provide efficient current and voltage control. Its four legs are distinguished as the emitter (EA), base (BE), and collector (CE). Its EA, BE and CE legs are all connected to the junction, making them the most versatile electrical components. The central junction dictates the current and voltage characteristics of the transistor. For example, they are commonly used as an amplifier because they operate differently to resistors, in that when a collector voltage is applied, the current is respectively amplified.

The MPS3646RLRAG provides a high power output. Its collector-emitter power outperforms most other BJTs of its generation. Its maximum collector-emitter voltage is 30V, which is double of what other transistors can offer. This makes it ideal for applications that need high performance, especially when the transfer of energy needs to be done in a short period of time. It is mainly used for power conditioning and motor control, as well as act as an amplifier in receivers.

The working principle behind the MPS3646RLRAG is quite simple. It is a current-controlled device and its operation is governed by the inertia of electrons. When a voltage is applied to the BE and CE legs of the transistor, the very electrons abide by the law of inertia and flow in one direction. This generates a surprising amount of power and makes it an ideal electrical component for power conditioning. When current flows through the transistor, a feedback loop is formed, allowing the resistance of the transistor to be adjusted and manipulated. This ensures efficient power transfer and provides a variety of applications.

The MPS3646RLRAG is a reliable single bipolar junction transistor and is particularly popular because of its low distortion operation. It also features low capacitance, low noise, low voltage and high speed operation. These qualities make it suitable for many different applications, including power conditioning, motor control, and amplifier systems.

The MPS3646RLRAG is reliable and resilient in the most demanding conditions. Its low voltage and thermal resistance make sure it does not overheat during operation, making it an ideal choice for a variety of power related applications. It is also capable of providing improved performance in comparison to other single bipolar transistors, making it a popular choice for engineers.

The specific data is subject to PDF, and the above content is for reference

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