MPS3904,126 Allicdata Electronics
Allicdata Part #:

568-2453-2-ND

Manufacturer Part#:

MPS3904,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 40V 0.1A TO92
More Detail: Bipolar (BJT) Transistor NPN 40V 100mA 180MHz 500m...
DataSheet: MPS3904,126 datasheetMPS3904,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 500mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS3904
Description

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MPS3904,126 Application Field and Working Principle

The MPS3904,126 is a transistor consisting of a single semiconductor crystal. It is classified as a bipolar junction transistor (BJT). This type of transistor is one of the most commonly used in electronics, and can be found in circuits everywhere, from consumer electronic devices to personal computers and servers. The MPS3904,126 is typically used in high-voltage applications, such as regulation and power conversion.

Application Field

The MPS3904,126 is designed to be used in high-voltage, high-current applications. It can handle currents up to 220A, and is designed to withstand up to 2-kV reverse voltages. Its primary application is in AC and DC motor control, inverters and converters, and high-voltage rectifiers. It is also often used in oil and gas industry, automotive and aerospace applications.

Working Principle

The MPS3904,126 is a bipolar junction transistor (BJT). A BJT is made up of three terminals: the base, the collector and the emitter. These terminals are connected to a sandwich of two layers of semiconductor material. The lower anode layer is made of a material with a high concentration of negatively-charged electrons, while the upper cathode layer consists of a material with a low concentration of electrons. When a voltage is applied to the base-emitter junction, this causes the electrons in the n-type layer to become attracted to the positive terminal and move into the p-type layer. This creates a current between the collector and emitter. This current can be used to control a larger load on the collector-emitter circuit.

Conclusion

The MPS3904,126 is a single bipolar junction transistor (BJT) that is designed for usage in high-voltage, high-current applications. It can handle up to 210A of current and withstand up to 2-kV reverse voltages. Its primary application is in AC and DC motor control, inverters, converters, and clean energy applications. The working principle of the MPS3904,126 is based on the three terminals of the bipolar junction transistor – the base, the collector and the emitter – connected to a sandwich of two semiconductor layers. When a voltage is applied to the base-emitter junction, this causes electrons in the n-type layer to move into the p-type layer, creating a current between the collector and emitter. This current can be used to control a larger load on the collector-emitter circuit.

The specific data is subject to PDF, and the above content is for reference

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