MPS5179_D26Z Allicdata Electronics
Allicdata Part #:

MPS5179_D26Z-ND

Manufacturer Part#:

MPS5179_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS RF NPN 12V 50MA TO-92
More Detail: RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole...
DataSheet: MPS5179_D26Z datasheetMPS5179_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS5179
Description

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The MPS5179_D26Z is a RF transistor from the bipolar junction transistor (BJT) family. It is mainly used in RF power amplifier design and can be found in a wide range of RF applications, ranging from radio transmission systems to radio-frequency and microwave transmitters. The MPS5179_D26Z is a high-power and high-frequency device and is a great choice for any RF project.

The MPS5179_D26Z is a NPN-type RF transistor. It is made out of a silicon epitaxial planar structure and features three layers of metallization, providing high gain and stability. The transistor is rated at 1 watt of power and has a frequency range of up to 12 GHz. This allows it to be used in high-speed communications, such as Wi-Fi and GPS technologies.

The MPS5179_D26Z works on the principle of charge transfer. The transistor is designed to transfer electrons from an N-type material to a P-type material, which is how it amplifies a signal. The transistor has three terminals, the base, collector, and emitter.

The base of the MPS5179_D26Z is connected to its power source. As current passes through the base, it triggers the flow of electrons from the emitter to the collector. This creates a current amplification, which can be adjusted by changing the current passing through the base.

The collector of the MPS5179_D26Z is connected to the circuit\'s load, which is where the amplified current is directed. It is rated to handle up to 1 watt of power and can operate up to a frequency of 12 GHz. The collector terminal also has an output voltage that can be adjusted too.

The emitter of the MPS5179_D26Z is connected to the circuit\'s ground terminal. Without a ground connection, the transistor will not be able to produce the desired current. The emitter also provides a low-impedance pathway for the current to flow, allowing for better power efficiency and output.

The MPS5179_D26Z is a great choice for high-frequency applications such as radio-frequency and microwave transmitters. Its high-power rating and wide frequency range make it a perfect choice for any RF project. It is also highly reliable and offers great stability.

The MPS5179_D26Z is a great choice for any RF project. Its high-power and wide frequency range make it highly desirable for a number of applications, such as radio-frequency and microwave transmitters. Its ability to transfer electrons from an N-type material to a P-type material allows for a high degree of current amplification and is highly reliable and offers excellent stability. The output voltage of the collector terminal also allows it to be used for different power output levels. All these features make the MPS5179_D26Z an ideal choice for any RF project.

The specific data is subject to PDF, and the above content is for reference

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