Allicdata Part #: | MPS5179_D27Z-ND |
Manufacturer Part#: |
MPS5179_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS RF NPN 12V 50MA TO-92 |
More Detail: | RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole... |
DataSheet: | MPS5179_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 2GHz |
Noise Figure (dB Typ @ f): | 5dB @ 200MHz |
Gain: | 15dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS5179 |
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The MPS5179_D27Z is a bipolar junction transistor (BJT) with a radio frequency (RF) application. It is a device designed for amplification and switching of both analog and digital signals, especially at high frequencies.
The MPS5179_D27Z is highly efficient and requires only a few external components to operate. It is also well-suited for use in high-power radio frequency and broadband applications. From maximum power output of 20 watts (typical) to supply voltages of 100V, the NPN transistor can operate in higher frequency applications than other BJTs. It can be used in high power audio applications up to 100 kHz. The MPS5179_D27Z is also extremely low noise with a noise figure of 3 dB typ, making it an ideal choice for sensitive receive applications.
The MPS5179_D27Z features a special construction which makes it suitable for high frequency and high power applications. The transistor\'s die is mounted in an insulated package, offering good heat dissipation and the ability to operate in high temperature applications. It also features a built-in thermal shutdown protection so that it will not overheat.
The MPS5179_D27Z also features a unique "dual gate" design. The dual gate design provides improved gain and excellent frequency response up to 200 MHz. It also increases efficiency and reduces power consumption. The device also offers immunity to power fluctuations, making it suitable for applications with fast start-up and extreme power supply conditions.
The MPS5179_D27Z\'s working principle is based on the PN junction. It is a three-terminal device requiring a source, drain and gate terminal to be connected to. The source terminal (S) is connected to a positive DC voltage, while the drain (D) is connected to a negative DC voltage. When an input voltage is applied to the gate terminal (G), the PN junction between the source and the drain is then modulated, allowing current to flow from the source to the drain and vice versa.
The MPS5179_D27Z can be used in a wide range of RF circuits, including transmitters, receivers, amplifiers, antenna amplifiers, oscillators, frequency converters, and many more. Due to its high-frequency performance and low noise figure, it is ideal for use in sensitive applications such as medical, aerospace, and military.
The MPS5179_D27Z is a versatile and efficient transistor designed for use in high-frequency and high-power radio frequency applications. It offers excellent frequency response, low noise performance, and high power output. It is an ideal choice for use in sensitive receive applications that require high levels of noise suppression. It also features a robust construction and built-in thermal shutdown protection.
The specific data is subject to PDF, and the above content is for reference
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