MPS5179 Allicdata Electronics
Allicdata Part #:

MPS5179OS-ND

Manufacturer Part#:

MPS5179

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN RF SS 12V TO92
More Detail: RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole...
DataSheet: MPS5179 datasheetMPS5179 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: MPS5179
Description

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MPS5179 is a type of Bipolar Junction Transistors, or BJT, and is part of the Radio Frequency, or RF field. It is used in a wide range of applications from low-power to high-power radio transmission and still used in a variety of electronics. This article will discuss its application field, working principle and provide an overview of the MPS5179.

Application Field of MPS5179:

The MPS5179 is a high-frequency, low-power transistor, with uses primarily in RF applications. RF components typically operate with frequencies ranging from 3kHz to higher than 100GHz, making the MPS5179 ideal for medium to high-power radio transmission through amplifiers and signal converters. In addition to its typical use in radios, the transistor is used as a frequency mixer, especially when combined with a diode. Finally, it is used as a switch in many electrical devices, such as televisions, remote controls, and computers.

Working Principle of MPS5179

The transistor is a three-layer semiconductor device made up of two P-type layers and one N-type layer. At the PN junction, a small electric signal is used to change the flow of current through the device. This current is the result of the transistor\'s working principle, the "current amplifier."

When a small current is passed through the PN junction, it causes the electrons in the conduction band of the N-type semiconductor to become excited and move freely throughout the layer. Electrons in the N-type layer then move towards the P-type layer, creating an electric field. This field causes a further increase in current as the electrons move to the P-type layer, creating an amplification of the original current.

Overview of the MPS5179:

The MPS5179 is a class C common-emitter RF amplifier transistor. It is made using a PN junction, which is created by taking two P-type and one N-type semiconductor. The three layers are then connected in series, creating an amplified current. The device has a small operating voltage range, making it useful for low-power applications, as well as high-power ones. It also has a low-input current, which can be increased with additional external components. In addition to its low-power RF applications, the MPS5179 is also used as a switch and a frequency mixer in many electrical devices.

In conclusion, the MPS5179 is a Bipolar Junction Transistor (BJT) designed for use in Radio Frequency (RF) applications. It is used primarily as an amplifier, a switch, and a frequency mixer, and it is ideal for use in low-power to high-power radio transmission. Its PN junction-based design and small operating voltage range make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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