Allicdata Part #: | MPS5179OS-ND |
Manufacturer Part#: |
MPS5179 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN RF SS 12V TO92 |
More Detail: | RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole... |
DataSheet: | MPS5179 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 2GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 3mA, 1V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS5179 |
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MPS5179 is a type of Bipolar Junction Transistors, or BJT, and is part of the Radio Frequency, or RF field. It is used in a wide range of applications from low-power to high-power radio transmission and still used in a variety of electronics. This article will discuss its application field, working principle and provide an overview of the MPS5179.
Application Field of MPS5179:
The MPS5179 is a high-frequency, low-power transistor, with uses primarily in RF applications. RF components typically operate with frequencies ranging from 3kHz to higher than 100GHz, making the MPS5179 ideal for medium to high-power radio transmission through amplifiers and signal converters. In addition to its typical use in radios, the transistor is used as a frequency mixer, especially when combined with a diode. Finally, it is used as a switch in many electrical devices, such as televisions, remote controls, and computers.
Working Principle of MPS5179
The transistor is a three-layer semiconductor device made up of two P-type layers and one N-type layer. At the PN junction, a small electric signal is used to change the flow of current through the device. This current is the result of the transistor\'s working principle, the "current amplifier."
When a small current is passed through the PN junction, it causes the electrons in the conduction band of the N-type semiconductor to become excited and move freely throughout the layer. Electrons in the N-type layer then move towards the P-type layer, creating an electric field. This field causes a further increase in current as the electrons move to the P-type layer, creating an amplification of the original current.
Overview of the MPS5179:
The MPS5179 is a class C common-emitter RF amplifier transistor. It is made using a PN junction, which is created by taking two P-type and one N-type semiconductor. The three layers are then connected in series, creating an amplified current. The device has a small operating voltage range, making it useful for low-power applications, as well as high-power ones. It also has a low-input current, which can be increased with additional external components. In addition to its low-power RF applications, the MPS5179 is also used as a switch and a frequency mixer in many electrical devices.
In conclusion, the MPS5179 is a Bipolar Junction Transistor (BJT) designed for use in Radio Frequency (RF) applications. It is used primarily as an amplifier, a switch, and a frequency mixer, and it is ideal for use in low-power to high-power radio transmission. Its PN junction-based design and small operating voltage range make it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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