
MQ1N8181 Circuit Protection |
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Allicdata Part #: | MQ1N8181-ND |
Manufacturer Part#: |
MQ1N8181 |
Price: | $ 20.38 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 18.52040 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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TVSs (Transient Voltage Suppressors) and diode technologies provide superior protection for most electrical and electronic systems. The MQ1N8181 is a unidirectional TVS diode that provides superior protection for low-voltage applications. With a low on-state voltage of 1.1 V and a voltage clamping of 5.4V, the MQ1N8181 is the ideal solution for protection against voltage transients and surges in low-voltage applications.
The MQ1N8181 is a unidirectional device designed to protect devices and systems from damage due to over-voltage situations. It is offered in a surface mount (SMT) package, which allows for easy installation and superior thermal capability. Its low turn-on voltage also allows for higher temperature operating range, which is a common requirement for many low-voltage system designs.
The MQ1N8181 can be used in a variety of low-voltage applications, such as automotive, consumer, industrial, medical, and telecom. It can be used to protect circuits from spikes and surges due to Electrostatic Discharge (ESD) and Transient Voltage Suppressors (TVS). It is also suitable for use as a low-voltage over-voltage protector in the automotive, medical and telecom industry.
The MQ1N8181 is made up of a single N-channel MOSFET (metal oxide semiconductor field effect transistor) embedded in a ceramic substrate. This MOSFET is specifically designed to provide protection against over-voltages. The device is designed to protect sensitive circuits from voltage transients and surges. It is designed to provide ultra-low capacitance and operation up to 5.4V, while reducing ESD susceptibility.
The working principle of the MQ1N8181 is based on the dynamic biasing of the MOSFET when an over-voltage event occurs. The affected MOSFET is dynamically biased to the common mode voltage, thus restricting the overvoltage difference. As the current passes through the MOSFET, it is redistributed to the other devices in the circuit. This ensures the devices are not exposed to voltages exceeding their peak ratings.
The MQ1N8181 can also provide superior protection for sensitive devices in low-voltage systems from high-frequency transients. It uses a specialized switching circuit to reduce the effect of high-frequency transients, thus ensuring the devices are protected from damage.
In summary, the MQ1N8181 is an excellent solution for low-voltage applications. Its low turn-on voltage and high ESD and transient protection ensures devices are well protected from over-voltage situations. The unidirectional design, low capacitance, and specialized switching circuit make the MQ1N8181 an ideal choice for low-voltage system designs and ESD, voltage transient, and surge protection.
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Part Number | Manufacturer | Price | Quantity | Description |
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MQ1N8148US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8165US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8181 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8156US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8177 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8182 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8174US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8170 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8166 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8181US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8150 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8153US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8159 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8175 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8180 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8162US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8168 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8177US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8160US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8166US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8161US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8173US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8148 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8170US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8152 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8163 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8174 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8158US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8154 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8157 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8160 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8159US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8169US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8178 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8164 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8149US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
MQ1N8158 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8149 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8151 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
MQ1N8157US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
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